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K6F2016T6E-TF450 PDF预览

K6F2016T6E-TF450

更新时间: 2024-11-11 14:51:47
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 139K
描述
Standard SRAM, 128KX16, 45ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48

K6F2016T6E-TF450 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1,
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92Is Samacsys:N
最长访问时间:45 nsJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:16.4 mm
内存密度:2097152 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):240认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:12 mmBase Number Matches:1

K6F2016T6E-TF450 数据手册

 浏览型号K6F2016T6E-TF450的Datasheet PDF文件第2页浏览型号K6F2016T6E-TF450的Datasheet PDF文件第3页浏览型号K6F2016T6E-TF450的Datasheet PDF文件第4页浏览型号K6F2016T6E-TF450的Datasheet PDF文件第5页浏览型号K6F2016T6E-TF450的Datasheet PDF文件第6页浏览型号K6F2016T6E-TF450的Datasheet PDF文件第7页 
Preliminary  
K6F2016T6E Family  
CMOS SRAM  
Document Title  
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
0.0 Initial Draft  
Draft Date  
Remark  
January 23, 2002  
Preliminary  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 0.0  
January 2002  
- 1 -  

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