是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TSOP1 | 包装说明: | TSOP1, |
针数: | 48 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.92 | Is Samacsys: | N |
最长访问时间: | 45 ns | JESD-30 代码: | R-PDSO-G48 |
JESD-609代码: | e0 | 长度: | 16.4 mm |
内存密度: | 2097152 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 48 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 128KX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP1 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 240 | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子节距: | 0.5 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
宽度: | 12 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K6F2016U4D | SAMSUNG |
获取价格 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F2016U4D-F | SAMSUNG |
获取价格 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F2016U4D-FF55 | SAMSUNG |
获取价格 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F2016U4D-FF550 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48 | |
K6F2016U4D-FF70 | SAMSUNG |
获取价格 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F2016U4D-FF700 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48 | |
K6F2016U4E | SAMSUNG |
获取价格 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F2016U4E-EF55T | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 | |
K6F2016U4E-EF70 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 | |
K6F2016U4E-EF70T | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 |