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K6F2016U4E-F PDF预览

K6F2016U4E-F

更新时间: 2024-09-29 22:18:19
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
9页 160K
描述
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2016U4E-F 数据手册

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K6F2016U4E Family  
CMOS SRAM  
Document Title  
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
1.0  
Initial Draft  
February 21, 2001  
Preliminary  
Finalize  
April 30, 2001  
Final  
- Change ICC2 from 21 to 26mA for 55ns product.  
- Change ICC2 from 17 to 20mA for 70ns product.  
- Remove "A1 Index Mark" of 48-TBGA package bottom side  
2.0  
Revise  
September 27, 2001 Final  
- Changed 48-TBGA vertical dimension  
E1(Typical) 0.55mm to 0.58mm  
E2(Typical) 0.35mm to 0.32mm  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 2.0  
- 1 -  
September 2001  

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