是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | VFBGA, BGA48,6X8,30 |
针数: | 48 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.91 | 最长访问时间: | 85 ns |
I/O 类型: | COMMON | JESD-30 代码: | R-PBGA-B48 |
JESD-609代码: | e0 | 长度: | 7 mm |
内存密度: | 2097152 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 48 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 128KX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | VFBGA |
封装等效代码: | BGA48,6X8,30 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 2.5 V |
认证状态: | Not Qualified | 座面最大高度: | 1 mm |
最大待机电流: | 0.000002 A | 最小待机电流: | 1.5 V |
子类别: | SRAMs | 最大压摆率: | 0.015 mA |
最大供电电压 (Vsup): | 2.7 V | 最小供电电压 (Vsup): | 2.3 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | BALL |
端子节距: | 0.75 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 6 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K6F2016T6E-TF450 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 45ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | |
K6F2016U4D | SAMSUNG |
获取价格 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F2016U4D-F | SAMSUNG |
获取价格 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F2016U4D-FF55 | SAMSUNG |
获取价格 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F2016U4D-FF550 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48 | |
K6F2016U4D-FF70 | SAMSUNG |
获取价格 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F2016U4D-FF700 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48 | |
K6F2016U4E | SAMSUNG |
获取价格 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
K6F2016U4E-EF55T | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 | |
K6F2016U4E-EF70 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 |