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K6F2016S4E-EF85 PDF预览

K6F2016S4E-EF85

更新时间: 2024-11-11 20:00:51
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
9页 158K
描述
Standard SRAM, 128KX16, 85ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48

K6F2016S4E-EF85 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:VFBGA, BGA48,6X8,30
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.91最长访问时间:85 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:7 mm
内存密度:2097152 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2.5 V
认证状态:Not Qualified座面最大高度:1 mm
最大待机电流:0.000002 A最小待机电流:1.5 V
子类别:SRAMs最大压摆率:0.015 mA
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:6 mm
Base Number Matches:1

K6F2016S4E-EF85 数据手册

 浏览型号K6F2016S4E-EF85的Datasheet PDF文件第2页浏览型号K6F2016S4E-EF85的Datasheet PDF文件第3页浏览型号K6F2016S4E-EF85的Datasheet PDF文件第4页浏览型号K6F2016S4E-EF85的Datasheet PDF文件第5页浏览型号K6F2016S4E-EF85的Datasheet PDF文件第6页浏览型号K6F2016S4E-EF85的Datasheet PDF文件第7页 
K6F2016S4E Family  
CMOS SRAM  
Document Title  
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
1.0  
Initial Draft  
April 17, 2001  
Preliminary  
Finalize  
September 27, 2001 Final  
- Changed 48-TBGA vertical dimension  
E1(Typical) 0.55mm to 0.58mm  
E2(Typical) 0.35mm to 0.32mm  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
- 1 -  
September 2001  

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