Datasheet > K6F2016S3M-ZI15

K6F2016S3M-ZI15

更新时间： 2024-11-12 08:28:03

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
10页	191K
描述
Standard SRAM, 128KX16, 150ns, CMOS, PBGA48, 6.20 X 13.75 MM, 0.75 MM PITCH, MICRO, BGA-48

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K6F2016S3M-ZI15 数据手册

K6F2016V3M, K6F2016S3M, K6F2016R3M Family

ocument Title

CMOS SRAM

128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Revision History

Revision No. History

Draft Date

Remark

0.0

0.1

Design target

October 2, 1996

Advance

Initial draft

December 1, 1996 Preliminary

- Add KM616FV2000 Family

- Erase KM616FU1000 Family and KM616FS1000 Family supprot

2.3~3.3V operating Vcc.

- Concept change high power version to low low power version

ISB1=10mA(Max)

- Add super low power version with special handling

ISB1=2.0mA(Max)

- Reduce Icc & Icc1

Write : 25mA to 20mA at Vcc=3.6V(Max)

1.0

2.0

Finalize

- Change datasheet format

- Erase reverse type package

March 4, 1998

May 3, 1999

Final

Revise

- Add 48-mBGA type package

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 2.0

May 1999

12 3 4 5 6 7...10

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与K6F2016S3M-ZI15相关器件

型号	品牌	获取价格	描述	数据表
K6F2016S4D-FF70	SAMSUNG	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48
K6F2016S4D-FF700	SAMSUNG	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, FBGA-48
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K6F2016S4D-FF85T	SAMSUNG	获取价格	Standard SRAM, 128KX16, 85ns, CMOS, PBGA48
K6F2016S4E-EF70	SAMSUNG	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48
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K6F2016U4D	SAMSUNG	获取价格	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2016U4D-F	SAMSUNG	获取价格	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2016U4D-FF55	SAMSUNG	获取价格	128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM