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K4B1G0846D-HCF7T PDF预览

K4B1G0846D-HCF7T

更新时间: 2024-11-02 08:34:47
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率
页数 文件大小 规格书
60页 1199K
描述
DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA82

K4B1G0846D-HCF7T 数据手册

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1Gb DDR3 SDRAM  
K4B1G04(08/16)46D  
1Gb D-die DDR3 SDRAM Specification  
82 / 100 FBGA with Lead-Free & Halogen-Free  
(RoHS Compliant)  
CAUTION :  
* This document includes some items still under discussion in JEDEC.  
* Therefore, those may be changed without pre-notice based on JEDEC progress.  
* And it’s highly recommended not to send the spec without Samsung’s permission.  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE  
CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-  
WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-  
OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT  
GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.1 August 2008  
Page 1 of 60  

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K4B1G0846E SAMSUNG

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DDR3 SDRAM Memory
K4B1G0846E-HCF8 SAMSUNG

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DDR DRAM, 128MX8, 0.15ns, CMOS, PBGA78,
K4B1G0846E-HCK0 SAMSUNG

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K4B1G0846F SAMSUNG

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K4B1G0846F-HCF8 SAMSUNG

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DDR DRAM, 128MX8, 0.3ns, CMOS, PBGA78,
K4B1G0846F-HCF8T SAMSUNG

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DDR DRAM, 128MX8, 0.3ns, CMOS, PBGA78,