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K4B1G0846F-HYH90 PDF预览

K4B1G0846F-HYH90

更新时间: 2024-11-02 06:20:31
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率
页数 文件大小 规格书
64页 1744K
描述
DDR DRAM, 128MX8, 0.255ns, CMOS, PBGA78

K4B1G0846F-HYH90 数据手册

 浏览型号K4B1G0846F-HYH90的Datasheet PDF文件第2页浏览型号K4B1G0846F-HYH90的Datasheet PDF文件第3页浏览型号K4B1G0846F-HYH90的Datasheet PDF文件第4页浏览型号K4B1G0846F-HYH90的Datasheet PDF文件第5页浏览型号K4B1G0846F-HYH90的Datasheet PDF文件第6页浏览型号K4B1G0846F-HYH90的Datasheet PDF文件第7页 
Rev. 1.31, Nov. 2010  
K4B1G0446F  
K4B1G0846F  
1.35V  
1Gb F-die DDR3L SDRAM  
78 FBGA with Lead-Free & Halogen-Free  
(RoHS compliant)  
datasheet  
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND  
SPECIFICATIONS WITHOUT NOTICE.  
Products and specifications discussed herein are for reference purposes only. All information discussed  
herein is provided on an "AS IS" basis, without warranties of any kind.  
This document and all information discussed herein remain the sole and exclusive property of Samsung  
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property  
right is granted by one party to the other party under this document, by implication, estoppel or other-  
wise.  
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or  
similar applications where product failure could result in loss of life or personal or physical harm, or any  
military or defense application, or any governmental procurement to which special terms or provisions  
may apply.  
For updates or additional information about Samsung products, contact your nearest Samsung office.  
All brand names, trademarks and registered trademarks belong to their respective owners.  
2010 Samsung Electronics Co., Ltd. All rights reserved.  
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