是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.75 |
最长访问时间: | 0.4 ns | 最大时钟频率 (fCLK): | 400 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 8 |
JESD-30 代码: | R-PBGA-B112 | 内存密度: | 1073741824 bit |
内存集成电路类型: | DDR DRAM | 内存宽度: | 16 |
端子数量: | 112 | 字数: | 67108864 words |
字数代码: | 64000000 | 组织: | 64MX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA112,11X22,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
电源: | 1.5 V | 认证状态: | Not Qualified |
刷新周期: | 8192 | 连续突发长度: | 8 |
子类别: | DRAMs | 标称供电电压 (Vsup): | 1.5 V |
表面贴装: | YES | 技术: | CMOS |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4B1G1646C-ZCG9 | SAMSUNG |
获取价格 |
1Gb C-die DDR3 SDRAM Specification |
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K4B1G1646D | SAMSUNG |
获取价格 |
1Gb D-die DDR3 SDRAM Specification |
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K4B1G1646D-HCF7 | SAMSUNG |
获取价格 |
1Gb D-die DDR3 SDRAM Specification |
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K4B1G1646D-HCF7T | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA100 |
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K4B1G1646D-HCF8 | SAMSUNG |
获取价格 |
1Gb D-die DDR3 SDRAM Specification |
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K4B1G1646D-HCF80 | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA100, ROHS COMPLIANT, FBGA-100 |
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K4B1G1646D-HCF8T | SAMSUNG |
获取价格 |
Cache DRAM Module, 64MX16, 0.3ns, CMOS, PBGA100 |
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K4B1G1646D-HCH9 | SAMSUNG |
获取价格 |
1Gb D-die DDR3 SDRAM Specification |
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K4B1G1646D-HCH9T | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 0.255ns, CMOS, PBGA100 |
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K4B1G1646E | SAMSUNG |
获取价格 |
DDR3 SDRAM Memory |
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