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K3N6C1000F-TC120 PDF预览

K3N6C1000F-TC120

更新时间: 2024-11-22 04:35:35
品牌 Logo 应用领域
三星 - SAMSUNG 有原始数据的样本ROM光电二极管
页数 文件大小 规格书
3页 47K
描述
MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

K3N6C1000F-TC120 数据手册

 浏览型号K3N6C1000F-TC120的Datasheet PDF文件第2页浏览型号K3N6C1000F-TC120的Datasheet PDF文件第3页 
K3N6C1000F-TC  
CMOS MASK ROM  
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM  
FEATURES  
GENERAL DESCRIPTION  
· Switchable organization  
4,194,304x8(byte mode)  
2,097,152x16(word mode)  
· Fast access time  
100ns(Max.) : CL=50pF  
120ns(Max.) : CL=100pF  
· Supply voltage : single +5V  
· Current consumption  
Operating : 50mA(Max.)  
Standby : 50mA(Max.)  
· Fully static operation  
The K3N6C1000F-TC is a fully static mask programmable  
ROM fabricated using silicon gate CMOS process technology,  
and is organized either as 4,194,304 x 8 bit(byte mode) or as  
2,097,152 x 16 bit(word mode) depending on BHE voltage  
level.(See mode selection table)  
This device operates with a 5V single power supply, and all  
inputs and outputs are TTL compatible.  
Because of its asynchronous operation, it requires no external  
clock assuring extremely easy operation.  
It is suitable for use in program memory of microprocessor, and  
data memory, character generator.  
· All inputs and outputs TTL compatible  
· Three state outputs  
The K3N6C1000F-TC is packaged in a 44-TSOP2.  
· Package  
-. K3N6C1000F-TC : 44-TSOP2-400  
PIN CONFIGURATION  
FUNCTIONAL BLOCK DIAGRAM  
A20  
X
MEMORY CELL  
MATRIX  
(2,097,152x16/  
4,194,304x8)  
N.C  
A18  
A20  
A19  
A8  
1
2
44  
43  
42  
41  
BUFFERS  
AND  
DECODER  
.
.
.
.
.
.
.
.
A17  
A7  
3
4
A9  
A6  
A5  
A4  
A3  
40 A10  
5
6
A11  
A12  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
Y
7
SENSE AMP.  
BUFFERS  
8
A13  
A14  
A15  
BUFFERS  
AND  
A2  
A1  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
DECODER  
A0  
A0  
A16  
TSOP2  
A-1  
BHE  
VSS  
CE  
VSS  
OE  
Q0  
.
.
.
Q15/A-1  
Q7  
CE  
Q8  
29 Q14  
Q0/Q8  
Q7/Q15  
CONTROL  
LOGIC  
OE  
Q1  
Q6  
28  
27  
26  
25  
24  
23  
Q9  
Q13  
Q5  
BHE  
Q2 19  
Q10 20  
Q12  
Q4  
Q3  
21  
22  
Q11  
VCC  
Pin Name  
A0 - A20  
Pin Function  
Address Inputs  
Data Outputs  
K3N6C1000F-TC  
Q0 - Q14  
Output 15(Word mode)/  
LSB Address(Byte mode)  
Q15 /A-1  
BHE  
CE  
Word/Byte selection  
Chip Enable  
OE  
Output Enable  
Power (+5V)  
Ground  
VCC  
VSS  
N.C  
No Connection  

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