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K3N6S1000D-YC15 PDF预览

K3N6S1000D-YC15

更新时间: 2024-11-21 20:10:07
品牌 Logo 应用领域
三星 - SAMSUNG 有原始数据的样本ROM光电二极管内存集成电路
页数 文件大小 规格书
5页 84K
描述
MASK ROM, 4MX8, 150ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48

K3N6S1000D-YC15 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1, TSSOP48,.71,20
针数:48Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.92最长访问时间:150 ns
其他特性:ALSO CONFIGURABLE AS 2M X 16备用内存宽度:8
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:16.4 mm内存密度:33554432 bit
内存集成电路类型:MASK ROM内存宽度:8
功能数量:1端子数量:48
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4MX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.71,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2.5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.000005 A子类别:MASK ROMs
最大压摆率:0.03 mA最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:12 mmBase Number Matches:1

K3N6S1000D-YC15 数据手册

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K3N6V(U)1000D-YC(E)/K3N6S1000D-YC(E)  
CMOS MASK ROM  
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM  
FEATURES  
GENERAL DESCRIPTION  
· Switchable organization  
4,194,304x8(byte mode)  
2,097,152x16(word mode)  
· Fast access time  
The K3N6V(U)1000D-YC(E) and K3N6S1000D-YC(E) are fully  
static mask programmable ROM fabricated using silicon gate  
CMOS process technology, and is organized either as  
4,194,304 x8 bit(byte mode) or as 2,097,152x16 bit(word  
mode) depending on BHE voltage level.(See mode selection  
table)  
Random Access Time  
3.3V/3.0V Operation : 100ns(Max.)  
2.5V Operation : 150ns(Max.)  
· Supply voltage  
K3N6V(U)1000D-YC(E) : single +3.0V/ single +3.3V  
K3N6S1000D-YC(E) : single +2.5V  
· Current consumption  
This device operates with low power supply, and all inputs and  
outputs are TTL compatible.  
Because of its asynchronous operation, it requires no external  
clock assuring extremely easy operation.  
Operating : 40mA(Max.)  
Standby : 30mA(Max.)  
It is suitable for use in program memory of microprocessor, and  
data memory, character generator.  
· Fully static operation  
· All inputs and outputs TTL compatible  
· Three state outputs  
The K3N6V(U)1000D-YC(E) and K3N6S1000D-YC(E) are  
packaged in a 48-TSOP1.  
· Package  
-. K3N6V(U)1000D-YC(E)/K3N6S1000D-YC(E)  
: 48-TSOP1-1218  
FUNCTIONAL BLOCK DIAGRAM  
Pin Name  
A0 - A20  
Pin Function  
Address Inputs  
A20  
X
MEMORY CELL  
MATRIX  
BUFFERS  
AND  
.
.
.
.
.
.
.
.
(2,097,152x16/  
4,194,304x8)  
Q0 - Q14  
Data Outputs  
DECODER  
Output 15(Word mode)/  
LSB Address(Byte mode)  
Q15 /A-1  
BHE  
CE  
Word/Byte selection  
Chip Enable  
Output Enable  
Power  
Y
SENSE AMP.  
BUFFERS  
AND  
DATA OUT  
BUFFERS  
OE  
DECODER  
A0  
VCC  
VSS  
A-1  
.
.
.
Ground  
CE  
Q0/Q8  
Q7/Q15  
CONTROL  
LOGIC  
OE  
BHE  

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K3N6U1000C-TC15 SAMSUNG

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K3N6U1000C-TC150 SAMSUNG

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MASK ROM, 2MX16, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3N6U1000C-TE15 SAMSUNG

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MASK ROM, 2MX16, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3N6U1000C-TE150 SAMSUNG

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MASK ROM, 2MX16, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3N6U1000D-YC SAMSUNG

获取价格

MASK ROM, 2MX16, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48
K3N6U1000D-YC10 SAMSUNG

获取价格

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