Datasheet > K3N6U1000D-YE10

K3N6U1000D-YE10

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		有原始数据的样本ROM 光电二极管
页数	文件大小	规格书
5页	84K
描述
MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48

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中文翻译

获取价格

数据手册

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K3N6U1000D-YE10 数据手册

K3N6V(U)1000D-YC(E)/K3N6S1000D-YC(E)

CMOS MASK ROM

32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM

FEATURES

GENERAL DESCRIPTION

· Switchable organization

4,194,304x8(byte mode)

2,097,152x16(word mode)

· Fast access time

The K3N6V(U)1000D-YC(E) and K3N6S1000D-YC(E) are fully

static mask programmable ROM fabricated using silicon gate

CMOS process technology, and is organized either as

4,194,304 x8 bit(byte mode) or as 2,097,152x16 bit(word

mode) depending on BHE voltage level.(See mode selection

table)

Random Access Time

3.3V/3.0V Operation : 100ns(Max.)

2.5V Operation : 150ns(Max.)

· Supply voltage

K3N6V(U)1000D-YC(E) : single +3.0V/ single +3.3V

K3N6S1000D-YC(E) : single +2.5V

· Current consumption

This device operates with low power supply, and all inputs and

outputs are TTL compatible.

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

Operating : 40mA(Max.)

Standby : 30mA(Max.)

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

· Fully static operation

· All inputs and outputs TTL compatible

· Three state outputs

The K3N6V(U)1000D-YC(E) and K3N6S1000D-YC(E) are

packaged in a 48-TSOP1.

· Package

-. K3N6V(U)1000D-YC(E)/K3N6S1000D-YC(E)

: 48-TSOP1-1218

FUNCTIONAL BLOCK DIAGRAM

Pin Name

A0 - A20

Pin Function

Address Inputs

A20

MEMORY CELL

MATRIX

BUFFERS

AND

(2,097,152x16/

4,194,304x8)

Q0 - Q14

Data Outputs

DECODER

Output 15(Word mode)/

LSB Address(Byte mode)

Q15 /A-1

BHE

Word/Byte selection

Chip Enable

Output Enable

Power

SENSE AMP.

BUFFERS

AND

DATA OUT

BUFFERS

DECODER

VCC

VSS

A-1

Ground

Q0/Q8

Q7/Q15

CONTROL

LOGIC

BHE

12 3 4 5

中文翻译

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型号	品牌	获取价格	描述	数据表
K3N6U1000E-GC12	SAMSUNG	获取价格	MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44
K3N6U1000E-GC120	SAMSUNG	获取价格	MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44
K3N6U1000E-TC120	SAMSUNG	获取价格	MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3N6U1000E-YC12	SAMSUNG	获取价格	MASK ROM, 2MX16, 120ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48
K3N6U1000F-C	SAMSUNG	获取价格	MASK ROM
K3N6U1000F-GC12	SAMSUNG	获取价格	MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44
K3N6U1000F-GC120	SAMSUNG	获取价格	MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44
K3N6U1000F-TC12	SAMSUNG	获取价格	MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3N6U1000F-TC120	SAMSUNG	获取价格	MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3N6U4000E-DC12	SAMSUNG	获取价格	MASK ROM, 2MX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42