Datasheet > K3N6U4000E-DC12

K3N6U4000E-DC12

更新时间： 2024-09-24 09:47:19

品牌	Logo	应用领域
三星 - SAMSUNG		有原始数据的样本ROM 光电二极管
页数	文件大小	规格书
3页	46K
描述
MASK ROM, 2MX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42

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K3N6U4000E-DC12 数据手册

K3N6V(U)4000E-DC

CMOS MASK ROM

32M-Bit (2Mx16) CMOS MASK ROM

FEATURES

GENERAL DESCRIPTION

· 2,097,152x16 bit organization

· Fast access time

3.3V Operation : 100ns(Max.)@CL=50pF,

120ns(Max.)@CL=100pF

3.0V Operation : 120ns(Max.)@CL=100pF

· Supply voltage : single +3.0V/ single +3.3V

· Current consumption

Operating : 40mA(Max.)

Standby : 30mA(Max.)

· Fully static operation

The K3N6V(U)4000E-DC is a fully static mask programmable

ROM organized 2,097,152x16 bit. It is fabricated using silicon-

gate CMOS process technology.

This device operates with 3.0V or 3.3V power supply, and all

inputs and outputs are TTL compatible.

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor and

data memory, character generator.

The K3N6V(U)4000E-DC is packaged in a 42-DIP.

· All inputs and outputs TTL compatible

· Three state outputs

· Package

-. K3N6V(U)4000E-DC : 42-DIP-600

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATION

A20

MEMORY CELL

MATRIX

A18

A17

A19

BUFFERS

AND

(2,097,152x16)

DECODER

39 A10

38 A11

A12

SENSE AMP.

BUFFERS

A13

A14

A15

A16

BUFFERS

AND

DECODER

DIP

VSS

32 A20

. .

VSS

Q15

CONTROL

LOGIC

Q14

26 Q13

Q10

Q12

Pin Name

A0 - A20

Q0 - Q15

Pin Function

Address Inputs

Q11

VCC

Data Outputs

Chip Enable

Output Enable

Power

K3N6V(U)4000E-DC

VCC

VSS

Ground

12 3

中文翻译

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