Datasheet > K3N6V1000C-GC12

K3N6V1000C-GC12

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		有原始数据的样本ROM 光电二极管
页数	文件大小	规格书
4页	72K
描述
MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44

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K3N6V1000C-GC12 数据手册

K3N6V(U)1000C-GC

CMOS MASK ROM

32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM

FEATURES

GENERAL DESCRIPTION

· Switchable organization

4,194,304x8(byte mode)

2,097,152x16(word mode)

· Fast access time

3.3V Operation : 120ns(Max.)

3.0V Operation : 150ns(Max.)

· Supply voltage : single +3.0V/ single +3.3V

· Current consumption

The K3N6V(U)1000C-GC is a fully static mask programmable

ROM fabricated using silicon gate CMOS process technology,

and is organized either as 4,194,304 x 8 bit(byte mode) or as

2,097,152 x 16 bit(word mode) depending on BHE voltage

level.(See mode selection table)

This device operates with 3.0V or 3.3V power supply, and all

inputs and outputs are TTL compatible.

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

Operating : 40mA(Max.)

Standby : 30mA(Max.)

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

· Fully static operation

· All inputs and outputs TTL compatible

· Three state outputs

The K3N6V(U)1000C-GC is packaged in a 44-SOP.

· Package

-. K3N6V(U)1000C-GC : 44-SOP-600

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATION

A20

MEMORY CELL

MATRIX

(2,097,152x16/

4,194,304x8)

BUFFERS

AND

DECODER

A20

N.C

A18

A17

A19

A10

A11

SENSE AMP.

BUFFERS

38 A12

37 A13

BUFFERS

AND

A14

DECODER

A15

A16

SOP

A-1

BHE

VSS

Q15/A-1

Q0/Q8

Q7/Q15

CONTROL

LOGIC

29 Q14

Q13

BHE

Q2 19

Q10 20

25 Q12

Pin Name

A0 - A20

Pin Function

Address Inputs

Data Outputs

Q11

VCC

Q0 - Q14

Output 15(Word mode)/

LSB Address(Byte mode)

K3N6V(U)1000C-GC

Q15 /A-1

BHE

Word/Byte selection

Chip Enable

Output Enable

Power

VCC

VSS

N.C

Ground

No Connection

12 3 4

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