K3N6V(U)1000E-YC
CMOS MASK ROM
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM
FEATURES
GENERAL DESCRIPTION
· Switchable organization
The K3N6V(U)1000E-YC is a fully static mask programmable
ROM fabricated using silicon gate CMOS process technology,
and is organized either as 4,194,304 x 8 bit(byte mode) or as
2,097,152 x 16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
4,194,304 x 8(byte mode)
2,097,152 x 16(word mode)
· Fast access time
3.3V Operation : 100ns(Max.)@CL=50pF,
120ns(Max.)@CL=100pF
3.0V Operation : 120ns(Max.)@CL=100pF
· Supply voltage : single +3.3V/ single +3.0V
· Current consumption
This device operates with 3.0V or 3.3V power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
Operating :40mA(Max.)
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
Standby : 30mA(Max.)
· Fully static operation
· All inputs and outputs TTL compatible
· Three state outputs
The K3N6V(U)1000E-YC is packaged in a 48-TSOP1.
· Package
K3N6V(U)1000E-YC : 48-TSOP1-1218
FUNCTIONAL BLOCK DIAGRAM
Pin Name
A0 - A20
Pin Function
Address Inputs
A20
X
MEMORY CELL
MATRIX
BUFFERS
AND
Q0 - Q14
Data Outputs
.
.
.
.
.
.
.
.
(2,097,152x16/
4,194,304x8)
Output 15(Word mode)/
LSB Address(Byte mode)
Q15 /A-1
DECODER
BHE
CE
Word/Byte selection
Chip Enable
Y
SENSE AMP.
OE
Output Enable
Power
BUFFERS
AND
VCC
DATA OUT
BUFFERS
Vss
Ground
DECODER
A0
Vss/DNU
N.C
Ground or Do not use
No Connection
A-1
.
.
.
CE
Q0/Q8
Q7/Q15
CONTROL
LOGIC
OE
BHE