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K3N6V1000E-YC10 PDF预览

K3N6V1000E-YC10

更新时间: 2022-12-01 20:51:38
品牌 Logo 应用领域
三星 - SAMSUNG 有原始数据的样本ROM光电二极管
页数 文件大小 规格书
4页 55K
描述
MASK ROM, 2MX16, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48

K3N6V1000E-YC10 数据手册

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K3N6V(U)1000E-YC  
CMOS MASK ROM  
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM  
FEATURES  
GENERAL DESCRIPTION  
· Switchable organization  
The K3N6V(U)1000E-YC is a fully static mask programmable  
ROM fabricated using silicon gate CMOS process technology,  
and is organized either as 4,194,304 x 8 bit(byte mode) or as  
2,097,152 x 16 bit(word mode) depending on BHE voltage  
level.(See mode selection table)  
4,194,304 x 8(byte mode)  
2,097,152 x 16(word mode)  
· Fast access time  
3.3V Operation : 100ns(Max.)@CL=50pF,  
120ns(Max.)@CL=100pF  
3.0V Operation : 120ns(Max.)@CL=100pF  
· Supply voltage : single +3.3V/ single +3.0V  
· Current consumption  
This device operates with 3.0V or 3.3V power supply, and all  
inputs and outputs are TTL compatible.  
Because of its asynchronous operation, it requires no external  
clock assuring extremely easy operation.  
Operating :40mA(Max.)  
It is suitable for use in program memory of microprocessor, and  
data memory, character generator.  
Standby : 30mA(Max.)  
· Fully static operation  
· All inputs and outputs TTL compatible  
· Three state outputs  
The K3N6V(U)1000E-YC is packaged in a 48-TSOP1.  
· Package  
K3N6V(U)1000E-YC : 48-TSOP1-1218  
FUNCTIONAL BLOCK DIAGRAM  
Pin Name  
A0 - A20  
Pin Function  
Address Inputs  
A20  
X
MEMORY CELL  
MATRIX  
BUFFERS  
AND  
Q0 - Q14  
Data Outputs  
.
.
.
.
.
.
.
.
(2,097,152x16/  
4,194,304x8)  
Output 15(Word mode)/  
LSB Address(Byte mode)  
Q15 /A-1  
DECODER  
BHE  
CE  
Word/Byte selection  
Chip Enable  
Y
SENSE AMP.  
OE  
Output Enable  
Power  
BUFFERS  
AND  
VCC  
DATA OUT  
BUFFERS  
Vss  
Ground  
DECODER  
A0  
Vss/DNU  
N.C  
Ground or Do not use  
No Connection  
A-1  
.
.
.
CE  
Q0/Q8  
Q7/Q15  
CONTROL  
LOGIC  
OE  
BHE  

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