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K3N6C3000E-DC10 PDF预览

K3N6C3000E-DC10

更新时间: 2024-02-24 15:02:53
品牌 Logo 应用领域
三星 - SAMSUNG 有原始数据的样本ROM光电二极管内存集成电路
页数 文件大小 规格书
3页 46K
描述
MASK ROM, 4MX8, 100ns, CMOS, PDIP42, 0.600 INCH, DIP-42

K3N6C3000E-DC10 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP42,.6
针数:42Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.92最长访问时间:100 ns
JESD-30 代码:R-PDIP-T42JESD-609代码:e0
长度:52.42 mm内存密度:33554432 bit
内存集成电路类型:MASK ROM内存宽度:8
功能数量:1端子数量:42
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4MX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP42,.6封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:5.08 mm
最大待机电流:0.00005 A子类别:MASK ROMs
最大压摆率:0.05 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:15.24 mmBase Number Matches:1

K3N6C3000E-DC10 数据手册

 浏览型号K3N6C3000E-DC10的Datasheet PDF文件第2页浏览型号K3N6C3000E-DC10的Datasheet PDF文件第3页 
K3N6C3000E-DC  
CMOS MASK ROM  
32M-Bit (4Mx8) CMOS MASK ROM  
FEATURES  
GENERAL DESCRIPTION  
· 4,194,304x8 bit organization  
· Fast access time  
The K3N6C3000E-DC is a fully static mask programmable  
ROM organized 4,194,304x8 bit. It is fabricated using silicon-  
gate CMOS process technology.  
100ns(Max.) : CL=50pF  
120ns(Max.) : CL=100pF  
· Supply voltage : single +5V  
· Current consumption  
Operating : 50mA(Max.)  
Standby : 50mA(Max.)  
· Fully static operation  
This device operates with a 5V single power supply, and all  
inputs and outputs are TTL compatible.  
Because of its asynchronous operation, it requires no external  
clock assuring extremely easy operation.  
It is suitable for use in program memory of microprocessor and  
data memory, character generator.  
· All inputs and outputs TTL compatible  
· Three state outputs  
The K3N6C3000E-DC is packaged in a 42-DIP.  
· Package  
-. K3N6C3000E-DC : 42-DIP-600  
FUNCTIONAL BLOCK DIAGRAM  
PIN CONFIGURATION  
A21  
X
MEMORY CELL  
MATRIX  
A19  
A18  
A8  
1
2
3
4
42  
41  
40  
39  
A20  
A9  
BUFFERS  
AND  
.
.
.
.
.
.
.
.
(4,194,304x8)  
A10  
A11  
DECODER  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
5
6
38 A12  
37 A13  
Y
SENSE AMP.  
BUFFERS  
7
36  
35  
34  
33  
A14  
A15  
BUFFERS  
AND  
8
9
A16  
A17  
DECODER  
A0  
10  
11  
12  
13  
14  
15  
16  
DIP  
CE  
32 A21  
VSS  
.
. .  
VSS  
A0  
31  
30  
29  
28  
27  
OE  
Q0  
Q7  
Q0  
Q7  
CE  
OE  
CONTROL  
LOGIC  
N.C  
Q1  
N.C  
Q6  
N.C  
17  
18  
19  
20  
21  
26 N.C  
Q2  
N.C  
Q3  
Q5  
25  
24  
23  
22  
N.C  
Q4  
Pin Name  
A0 - A21  
Q0 - Q7  
CE  
Pin Function  
Address Inputs  
N.C  
VCC  
Data Outputs  
Chip Enable  
Output Enable  
Power (+5V)  
Ground  
K3N6C3000E-DC  
OE  
VCC  
VSS  

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