JMTJ210P02A
Typical Performance Characteristics
Figure 7: Normalized Breakdown voltage vs.
Junction Temperature
Figure 8: Normalized on Resistance vs.
Junction Temperature
1.10
1.6
1.4
1.2
1
VGS = -4.5V
ID = -7A
ID = -1mA
1.05
1.00
0.95
0.90
0.8
0.6
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ(℃) Junction Temperature
TJ(℃) Junction Temperature
Figure 9: Maximum Safe Operating Area
Figure 10: Maximum Continuous Drian Current
vs. Ambient Temperature
1000
100
10
8
6
4
2
0
VGS= -4.5V
Limited by RDS(ON)
10us
100us
1ms
1
10ms
100ms
TA = 25°C
Single Puse
0.1
0.01
DC
0.1
1
10
100
0
25
50
75
100
125
150
-VDS(V)
TA(℃) Ambient Temperature
Figure 11: Normalized Maximum Transient
Thermal Impedance
Figure 12: Peak Current Capacity
10000
1000
100
10
10
1
D = 0.5,
0.2,
VGS = -4.5V
0.1,
0.05,
0.02,
0.01,
single pulse
0.1
0.01
0.001
0.0001
Duty factor: D = t1/t2
Peak TJ = TA + PDM x ZθJA x RθJA
Single Pulse
1.E-04
0.00001
1
1.E-06
1.E-04
1.E-02
1.E+00
1.E+02
1.E+04
1.E-06
1.E-02
t, Pulse Width (s)
1.E+00
1.E+02
1.E+04
t, Pulse Width (s)
JieJie Microelectronics Co., Ltd
4
Version:1.4