Datasheet > JMTG200C03D

JMTG200C03D

更新时间： 2023-12-06 20:10:26

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描述
低压 N-ch (≤ 30V )

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JMTG200C03D 数据手册

JMTG200C03D

N-Channel Electrical Characteristics (T_J=25℃ unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ.

Max. Units

Off Characteristic

V_(BR)DSS

I_DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Body Leakage Current

V_GS=0V, I_D=250μA

V_DS=30V, V_GS=0V

V_DS=0V, V_GS=±20V

μA

I_GSS

±100

On Characteristics

V_GS(th)Gate Threshold Voltage

V_DS=V_GS, I_D=250μA

V_GS=10V, I_D=5A

V_GS=4.5V, I_D=3A

1.0

1.5

2.5

mΩ

Static Drain-Source on-Resistance

R_DS(on)

note2

Dynamic Characteristics

C_iss

C_oss

C_rss

Q_g

Input Capacitance

490

1.7

V_DS=15V, V_GS=0V,

f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V_DS=15V, I_D=5.8A,

V_GS=10V

Q_gs

Q_gd

Gate-Source Charge

Gate-Drain(“Miller”) Charge

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

V_DS=15V, I_D=3A,

V_GS=10V, R_REN=3Ω

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain to Source Diode Forward

I_S

Current

I_SM

Maximum Pulsed Drain to Source Diode Forward Current

Drain to Source Diode Forward

V_GS=0V, I_S=11A

V_SD

1.2

Voltage

trr

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery

I_F=5A,

dI/dt=100A/μs

Qrr

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2. EAS condition : T_J=25℃, V_DD=15V, V_G=10V, L=0.5mH, Rg=25Ω, I_AS=6A

T_J=25℃, V_DD= -15V, V_G= -10V, L=0.5mH, Rg=25Ω, I_AS= -11A

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%

JieJie Microelectronics CO. , Ltd

Version :1.0

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