Datasheet > JANHCA2N3867

JANHCA2N3867

更新时间： 2024-11-02 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
21页	309K
描述
TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 3A I(C) \| TO-5

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JANHCA2N3867 数据手册

INCH-POUND

The documentation and process conversion measures necessary to

comply with this document shall be completed by 2 July, 2002.

MIL-PRF-19500/350G

2 April 2002

SUPERSEDING

MIL-PRF-19500/350F

18 August 2000

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER

TYPES: 2N3867, 2N3867S, 2N3868, AND 2N3868S

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistor.

Four levels of product assurance are provided for each encapsulated device type and two levels of product

assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (TO- 5, TO-39) for encapsulated devices, figures 2 and 3 for

unencapsulated devices.

1.3 Maximum ratings. Unless otherwise specified, T_A= +25°C.

Types

CBO

CEO

EBO

and

R_θ

STG

+25°C

V dc

min

V dc

min

V dc

A dc

°C

°C/W

2N3867, S

2N3868, S

1.0

4.0

3.0

-65 to +200

17.5

1/ Derate linearly 5.71 mW/°C for T_A> +25°C.

2/ Derate linearly 5.71 mW/°C for T_C> +25°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P.O. Box

3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426)

appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...21

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JANHCA2N6756	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| TO-3
JANHCA2N6758	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9A I(D) \| TO-3