Datasheet > JAN2N3735L

JAN2N3735L

更新时间： 2024-11-10 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
20页	121K
描述
TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1.5A I(C) \| TO-5VAR

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JAN2N3735L 数据手册

INCH-POUND

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 6 June 2002.

MIL-PRF-19500/395G

6 March 2002

SUPERSEDING

MIL-PRF-19500/395F

26 February 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING

TYPES 2N3735, 2N3735L, 2N3737 AND 2N3737UB, JAN, JANTX, JANTXV, JANS AND JANHC, JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Four

levels of product assurance are provided for each device type as specified in MIL-PRF-19500 and two levels of

product assurance are provided for unencapsulated devices .

1.2 Physical dimensions. See figure 1 (TO-39, TO-5 and TO-46), figure 2 (2N3737UB) and figure 3 (JANHC and

JANKC).

1.3 Maximum ratings.

Type

P_T

T_A= +25°C

1.0 (1)

0.5 (3)

0.5 (5)

P_T

T_C=+25°C

V_CBOV_CEO

V_EBO

I_C

R_q

T_Jand

T_STG

V dc

A dc

1.5

°C/mW

.060

.088

°C/W

175

350

325

°C

2N3735

2N3737

2N3737UB

2.9 (2)

1.9 (4)

-65 to +200

1.5

(1) Derate linearly at 5.71 mW/°C above T_A= +25°C.

(2) Derate linearly at 16.6 mW/°C above T_C= +25°C.

(3) Derate linearly at 2.86 mW/°C above T_A= +25°C.

(4) Derate linearly at 11.3 mW/°C above T_C= +25°C.

(5) Derate linearly at 3.07 mW/°C above T_A= +37.5°C.

1.4 Primary electrical characteristics.

h_FE3(1)

|h_fe|

V_CE(sat)

C_obo

Pulse response

V_CE= 1.0 V dc

I_C= 0.5 A dc

V_CE= 10 V dc

I_C= 50 mA dc

f = 100 MHz

I_C= 500 mA dc

I_B= 50 mA dc

V_CB= 10 V dc

Limits

I_E= 0

100 kHz £ f £ 1 MHz

t_d

t_r

t_off

V dc

0.5

Min

Max

140

2.5

6.0

8.0

(1) Pulsed (see 4.5.1)

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

FSC 5961

12 3 4 5 6 7...20

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与JAN2N3735L相关器件

型号	品牌	获取价格	描述	数据表
JAN2N3737	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39,
JAN2N3737UB	ETC	获取价格	BJT
JAN2N3739	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 250MA I(C) \| TO-66
JAN2N3740	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR
JAN2N3741	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR
JAN2N3743	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,
JAN2N3743U4	MICROSEMI	获取价格	Transistor
JAN2N3749	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR
JAN2N3762	MICROSEMI	获取价格	PNP SWITCHING SILICON TRANSISTOR
JAN2N3762L	MICROSEMI	获取价格	PNP SWITCHING SILICON TRANSISTOR

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