是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | BCY |
包装说明: | CYLINDRICAL, O-MBCY-W4 | 针数: | 4 |
Reach Compliance Code: | not_compliant | HTS代码: | 8541.21.00.95 |
风险等级: | 5.14 | 配置: | SINGLE |
最小漏源击穿电压: | 50 V | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 3 pF | 最高频带: | VERY HIGH FREQUENCY BAND |
JEDEC-95代码: | TO-206AF | JESD-30 代码: | O-MBCY-W4 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DEPLETION MODE |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.3 W | 认证状态: | Not Qualified |
参考标准: | MIL-19500/375 | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MX2N3821UB | MICROSEMI |
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MV2N3821UB | MICROSEMI |
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MQ2N3821UB | MICROSEMI |
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RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, CERA |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N3822 | MICROSEMI |
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TECHNICAL DATA | |
JAN2N3823 | MICROSEMI |
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TECHNICAL DATA | |
JAN2N3838 | ETC |
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JAN2N3846 | MICROSEMI |
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NPN POWER SILICON TRANSISTOR | |
JAN2N3847 | MICROSEMI |
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NPN POWER SILICON TRANSISTOR | |
JAN2N3866 | RAYTHEON |
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RF Small Signal Bipolar Transistor, 1-Element, Silicon, TO-39, | |
JAN2N3866A | RAYTHEON |
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RF Small Signal Bipolar Transistor, 1-Element, Silicon, TO-39, | |
JAN2N3866AUB | ETC |
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BJT | |
JAN2N3866UB | ETC |
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BJT | |
JAN2N3867 | MICROSEMI |
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Silicon PNP Power Transistors |