生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.09 | Is Samacsys: | N |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JESD-30 代码: | O-MUPM-X4 | 元件数量: | 1 |
端子数量: | 4 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N3997 | MICROSEMI |
获取价格 |
NPN POWER SWITCHING SILICON TRANSISTOR |
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JAN2N3997 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 |
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JAN2N3998 | MICROSEMI |
获取价格 |
NPN POWER SWITCHING SILICON TRANSISTOR |
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JAN2N3998 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 |
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JAN2N3999 | MICROSEMI |
获取价格 |
NPN POWER SWITCHING SILICON TRANSISTOR |
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JAN2N3999 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 |
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JAN2N4026 | MOTOROLA |
获取价格 |
1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18, TO-206AA, 3 PIN |
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JAN2N4029 | RAYTHEON |
获取价格 |
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39, |
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JAN2N4033 | RAYTHEON |
获取价格 |
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39, |
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JAN2N4033UA | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC P |
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