JAN2N3822

更新时间： 2024-02-11 04:58:13

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	57K
描述
TECHNICAL DATA

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

JAN2N3822 数据手册

TECHNICAL DATA

N-CHANNEL J-FET DEPLETION MODE

Qualified per MIL-PRF-19500/ 375

Devices

Qualified Level

JANTX

JANTXV

2N3821

2N3822

2N3823

MAXIMUM RATINGS

2N3821

Symbol 2N3822 2N3823 Unit

Parameters / Test Conditions

Gate-Source Voltage

Drain-Source Voltage

Drain-Gate Voltage

V_GSR

V_DS

V_DG

I_GF

⁰C

Gate Current

Power Dissipation

TO-72*

(TO-206AF)

T_A= +25⁰C ⁽¹⁾

P_T

300

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to +200

(1) Derate linearly 1.7 mW/⁰C for T_A+25 C.

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Parameters / Test Conditions

Gate-Source Breakdown Voltage

V_DS= 0, I_G= 1.0 mAdc

Symbol

Min.

Max.

Units

V_(BR)GSSR

Vdc

2N3821, 2N3822

2N3823

Gate Reverse Current

V_DS= 0, V_GS= 30 Vdc

V_DS= 0, V_GS= 20 Vdc

Zero-Gate-Voltage Drain Current

V_GS= 0, V_DS= 15 Vdc

2N3821, 2N3822

2N3823

I_GSSR

0.1

0.5

Vdc

2N3821

2N3822

2N3823

I_DSS

0.5

2.0

4.0

2.5

Gate-Source Voltage

V_DS= 15 Vdc, I_D= 50 µAdc

V_DS= 15 Vdc, I_D= 200 µAdc

V_DS= 15 Vdc, I_D= 400 µAdc

Gate-Source Cutoff Voltage

V_DS= 15 Vdc, I_D= 0.5 hAdc

2N3821

2N3822

2N3823

0.5

1.0

2.0

4.0

7.5

V_GS

4.0

6.0

8.0

2N3821

2N3822

2N3823

V_GS(off)

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

中文翻译

下载PDF

JAN2N3822 替代型号

型号	品牌	替代类型	描述	数据表
MV2N3822UB	MICROSEMI	功能相似	RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, CERA
MX2N3822UB	MICROSEMI	功能相似	RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, CERA
MQ2N3822UB	MICROSEMI	功能相似	RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, CERA

与JAN2N3822相关器件

型号	品牌	获取价格	描述	数据表
JAN2N3823	MICROSEMI	获取价格	TECHNICAL DATA
JAN2N3838	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| COMPLEMENTARY \| 40V V(BR)CEO \| 600MA I(C) \| TO-89
JAN2N3846	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
JAN2N3847	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
JAN2N3866	RAYTHEON	获取价格	RF Small Signal Bipolar Transistor, 1-Element, Silicon, TO-39,
JAN2N3866A	RAYTHEON	获取价格	RF Small Signal Bipolar Transistor, 1-Element, Silicon, TO-39,
JAN2N3866AUB	ETC	获取价格	BJT
JAN2N3866UB	ETC	获取价格	BJT
JAN2N3867	MICROSEMI	获取价格	Silicon PNP Power Transistors
JAN2N3867S	MICROSEMI	获取价格	Silicon PNP Power Transistors