Datasheet > JAN2N3866UB

JAN2N3866UB

更新时间： 2024-09-30 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
22页	124K
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JAN2N3866UB 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 23 May 2002.

INCH-POUND

MIL-PRF-19500/398F

23 January 2002

SUPERSEDING

MIL-PRF-19500/398E

11 September 2000

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY

TYPES 2N3866, 2N3866A, 2N3866UB, 2N3866AUB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

* 1.1 Scope. This specification covers the performance requirements for NPN silicon, VHF-UHF amplifier

transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Two levels of product assurance are provided for die.

* 1.2 Physical dimensions. See figure 1 (TO-39), figure 2 (surface mount, UB), and figure 3 (die).

* 1.3 Maximum ratings.

Types

P_T

T_C= (3),

P_T(1)

T_A= (2)

T_Jand

T_STG

R_θJC

R_θJA

V_CBO

V dc

V_CEO

V dc

V_EBO

V dc

I_C

A dc

°C

°C/W

2N3866, 2N3866A

2N3866UB, 2N3866AUB

2.9

1.0

0.5

3.5

0.4

-65 to +200

325

(1) Derate linearly 5.71 mW/°C (2N3866, 2N3866A) and 2.86 mW/°C (2N3866UB, 2N3866AUB) above

T_A≥ +25°C.

(2) T_A= Room ambient as defined in the general requirements of MIL-PRF-19500.

(3) P_T= 2.9 W at T_C= +25°C, derate at 16.6 mW/°C above T_C> +25°C.

* 1.4 Primary electrical characteristics.

out2

FE (1)

CE(SAT)

obo

out1

= 5.0 V dc

= 15 V dc

= 100 mA dc

= 10 mA dc

= 28 V dc

= 28 V dc V

= 28 V dc

= 50 mA dc

= 0.15 W Pin = 0.075 W

= 50 mA dc

= 0

f = 200 MHz

f = 400 MHz

100 kHz ≤ f ≤ 1 MHz

2N3866

2N3866A

2N3866

2N3866A

V dc

1.0

2N3866UB 2N3866AUB 2N3866UB 2N3866AUB

Min

Max

200

2.5

8.0

4.0

7.5

1.0

2.0

0.5

3.5

(1) Pulsed (see 4.5.1)

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P. O. Box

3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426)

appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...22

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与JAN2N3866UB相关器件

型号	品牌	获取价格	描述	数据表
JAN2N3867	MICROSEMI	获取价格	Silicon PNP Power Transistors
JAN2N3867S	MICROSEMI	获取价格	Silicon PNP Power Transistors
JAN2N3868	MICROSEMI	获取价格	Silicon PNP Power Transistors
JAN2N3868S	MICROSEMI	获取价格	Silicon PNP Power Transistors
JAN2N3879	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
JAN2N388	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 200MA I(C) \| TO-5
JAN2N3902	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 2.5A I(C) \| TO-3
JAN2N3960	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| TO-18
JAN2N3960UB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 12V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-3
JAN2N396A	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 200MA I(C) \| TO-5

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