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JAN2N4033UA PDF预览

JAN2N4033UA

更新时间: 2024-02-27 13:06:26
品牌 Logo 应用领域
美高森美 - MICROSEMI 开关晶体管
页数 文件大小 规格书
6页 284K
描述
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3

JAN2N4033UA 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMALL OUTLINE, R-CDSO-N3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.51Is Samacsys:N
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):25
JESD-30 代码:R-CDSO-N3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Qualified参考标准:MIL-19500/512
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):210 ns
最大开启时间(吨):40 nsBase Number Matches:1

JAN2N4033UA 数据手册

 浏览型号JAN2N4033UA的Datasheet PDF文件第2页浏览型号JAN2N4033UA的Datasheet PDF文件第3页浏览型号JAN2N4033UA的Datasheet PDF文件第4页浏览型号JAN2N4033UA的Datasheet PDF文件第5页浏览型号JAN2N4033UA的Datasheet PDF文件第6页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
PNP SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/512  
DEVICES  
LEVELS  
2N4029  
2N4033  
2N4033UA  
2N4033UB  
JAN  
JANTX  
JANTXV  
JANS  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
80  
5.0  
TO-18 (TO-206AA)  
2N4029  
1.0  
2N4029 1  
0.5  
0.8  
0.5  
Total Power Dissipation @ TA =  
+25°C  
2N4033 2  
PT  
W
2N4033UA, UB3  
Operating & Storage Junction Temperature Range  
Tj, Tstg  
RθJC  
-65 to +200  
°C  
2N4029  
Thermal Resistance, Junction-to-Case  
2N4033  
80  
40  
°C/W  
Note:  
1. Derate linearly 2.86mW/°C for TA > +25°C  
2. Derate linearly 4.56mW/°C for TA > +25°C  
3. For UB package and use RθJC or see thermal curves in /512  
TO-39 (TO-205AD)  
2N4033  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERTICS  
Collector-Base Cutoff Current  
VCB = 80Vdc  
UA Package  
μAdc  
ηAdc  
μAdc  
10  
10  
25  
ICBO  
V
CB = 60Vdc  
VCB = 60Vdc, TA = +150°C  
Emitter-Base Cutoff Current  
VEB = 5.0Vdc  
10  
25  
μAdc  
ηAdc  
IEBO  
V
EB = 3.0Vdc  
Collector-Emitter Cutoff Current  
BE = 2.0Vdc, VCE = 60Vdc  
ICEX  
25  
ηAdc  
V
UB Package  
T4-LDS-0157 Rev. 2 (101305)  
Page 1 of 6  

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