Datasheet > JAN2N44A

JAN2N44A

更新时间： 2024-09-30 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
9页	112K
描述
TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 50MA I(C) \| TO-5

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JAN2N44A 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 1 June 1999.

INCH-POUND

MIL-PRF-19500/6C

1 March 1999

SUPERSEDING

MIL-S-19500/6B

28 December 1971

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP,

GERMANIUM, LOW-POWER,

TYPES 2N43AZ1, 2N43AZ2, 2N44AZ1 AND 2N44AZ2

This Specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP, germanium, low-power transistor. One level of product

assurance is provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (Z1 suffix) and figure 2 (Z2 suffix).

1.3 Maximum ratings.

P_T1/

V_CB

V_EB

V_CEO

T_J

T_STG

T_A= +25°C

150

V dc

-45

V dc

-5

V dc

-30

°C

+85

-55 to +100

1/ Derate linearly 2.50 mW/°C for T_A> +25°C.

1.4 Primary electrical characteristics at T_A= +25°C.

Limits

Types

h_fe

h_ib

h_ob

V_CB= -5 V dc

I_E= 1.0 mA dc

f_hfb

C_obo

100 kHz <f < 1 MHz

V_CB= -5 V dc

I_E= 0

C_obo

V_CB= -5 V dc

I_E= 1.

V_CE= -5 V dc

I_E= 1.0 mA dc

V_CB= -5 V dc

I_E= 1.0 mA dc

f = 1 kHz

MHz

mmho

Min

2N43A

2N44A

0.5

0.1

Max

2N43A

2N44A

1.5

3.5

3.0

1/ Applies to both package configurations.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

Distribution Statement A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...9

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