是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-39 |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.18 | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 200 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | JEDEC-95代码: | TO-39 |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 参考标准: | MIL |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 10 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N4930U4 | MICROSEMI |
获取价格 |
Transistor | |
JAN2N4931U4 | MICROSEMI |
获取价格 |
Transistor | |
JAN2N4957 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30MA I(C) | TO-72 | |
JAN2N4957UB | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30MA I(C) | LLCC | |
JAN2N5002 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA | |
JAN2N5003 | ETC |
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TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-210AA | |
JAN2N5004 | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA | |
JAN2N5005 | ETC |
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TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-210AA | |
JAN2N5011 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, | |
JAN2N5011S | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, |