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JAN2N4930 PDF预览

JAN2N4930

更新时间: 2024-11-18 21:14:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 放大器晶体管
页数 文件大小 规格书
2页 54K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN

JAN2N4930 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-39
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.18最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:200 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-39
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified参考标准:MIL
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
Base Number Matches:1

JAN2N4930 数据手册

 浏览型号JAN2N4930的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP HIGH VOLTAGE SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 397  
Devices  
Qualified Level  
JAN, JANTX  
JANTXV  
2N3743  
2N4930  
2N4931  
MAXIMUM RATINGS  
Ratings  
Sym 2N3743 2N4930 2N4931 Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
300  
200  
200  
5.0  
250  
Vdc  
VCEO  
VCBO  
VEBO  
IC  
300  
250  
Vdc  
Vdc  
200  
mAdc  
Total Power Dissipation  
@TA = +250C 1  
@TC = +250C 2  
1.0  
5.0  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
TO-39*  
stg  
(TO-205AD)  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
35  
Unit  
0C/W  
Thermal Resistance Junction-to-Case  
R
qJC  
1) Derate linearly 5.71 mW/0C for TA > +250C  
2) Derate linearly 28.6 mW/0C for TC > +250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 1.0 mAdc  
300  
200  
250  
2N3743  
2N4930  
2N4931  
Vdc  
V(BR)  
CEO  
Collector-Emitter Breakdown Voltage  
300  
200  
250  
IC = 100 mAdc  
2N3743  
2N4930  
2N4931  
Vdc  
Vdc  
V(BR)  
CBO  
Emitter-Base Breakdown Voltage  
IE = 100 mAdc  
5.0  
V(BR)  
EBO  
Collector-Base Cutoff Current  
VCB = 250 Vdc  
VCB = 150 Vdc  
250  
250  
250  
2N3743  
2N4930  
2N4931  
ICBO  
hAdc  
VCB = 200 Vdc  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JAN2N4930 替代型号

型号 品牌 替代类型 描述 数据表
2N4930 MICROSEMI

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