是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-CDSO-N3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.2 |
配置: | SINGLE | 最小漏源击穿电压: | 30 V |
最大漏源导通电阻: | 175 Ω | FET 技术: | JUNCTION |
最大反馈电容 (Crss): | 7 pF | JESD-30 代码: | R-CDSO-N3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
参考标准: | MIL-19500/476C | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | NO LEAD |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N5151 | MICROSEMI |
获取价格 |
PNP POWER SILICON TRANSISTOR | |
JAN2N5151L | MICROSEMI |
获取价格 |
PNP POWER SILICON TRANSISTOR | |
JAN2N5151U3 | MICROSEMI |
获取价格 |
PNP POWER SILICON TRANSISTOR | |
JAN2N5152 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR | |
JAN2N5152L | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR | |
JAN2N5153 | MICROSEMI |
获取价格 |
PNP POWER SILICON TRANSISTOR | |
JAN2N5153L | MICROSEMI |
获取价格 |
PNP POWER SILICON TRANSISTOR | |
JAN2N5153U3 | MICROSEMI |
获取价格 |
PNP POWER SILICON TRANSISTOR | |
JAN2N5154 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR | |
JAN2N5154L | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR |