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JAN2N5116UB PDF预览

JAN2N5116UB

更新时间: 2024-11-18 20:07:23
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
2页 49K
描述
Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3

JAN2N5116UB 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-CDSO-N3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.2
配置:SINGLE最小漏源击穿电压:30 V
最大漏源导通电阻:175 ΩFET 技术:JUNCTION
最大反馈电容 (Crss):7 pFJESD-30 代码:R-CDSO-N3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL认证状态:Not Qualified
参考标准:MIL-19500/476C表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

JAN2N5116UB 数据手册

 浏览型号JAN2N5116UB的Datasheet PDF文件第2页 
TECHNICAL DATA  
P-CHANNEL J-FET  
Qualified per MIL-PRF-19500/ 476  
Devices  
Qualified  
Level  
JAN  
JANTX  
JANTXV  
2N5114  
2N5114UB  
2N5115  
2N5115UB  
2N5116  
2N5116UB  
ABSOLUTE MAXIMUM RATINGS (TC =+250C unless otherwise noted)  
Parameters / Test Conditions  
Gate-Source Voltage (1)  
Drain-Source Voltage (1)  
Drain-Gate Voltage  
Symbol  
VGS  
VDS  
VDG  
IG  
All Devices  
Unit  
Vdc  
Vdc  
Vdc  
mAdc  
W
30  
30  
30  
Gate Current  
50  
TO-18*  
(TO-206AA)  
Power Dissipation  
TA = +250C (2)  
PT  
0.500  
-65 to +200  
Storage Temperature Range  
Tstg  
0C  
(1) Symmetrical geometry allows operation of those units with source/drain leads interchanged.  
(2) Derate linearly 3.0 mW/0C for TA > 250C.  
Surface Mount  
(UB version)  
*See appendix A  
for package  
outline  
ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted)  
Parameters / Test Conditions  
Gate-Source Breakdown Voltage  
VDS = 0, IG = 1.0 mAdc  
Symbol  
Min.  
Max.  
Units  
V(BR)GSS  
30  
Vdc  
Drain-Source “On” State Voltage  
VGS = 0 Vdc, ID = -15 mAdc  
VGS = 0 Vdc, ID = -7.0 mAdc  
VGS = 0 Vdc, ID = -3.0 mAdc  
Gate Reverse Current  
2N5114  
2N5115  
2N5116  
1.3  
0.8  
0.6  
VDS(on)  
Vdc  
IGSS  
500  
pAdc  
VDS = 0, VGS = 20 Vdc  
Drain Current Cutoff  
VGS = 12 Vdc, VDS = -15 Vdc  
VGS = 7.0 Vdc, VDS = -15 Vdc  
VGS = 5.0 Vdc, VDS = -15 Vdc  
2N5114  
2N5115  
2N5116  
-500  
-500  
-500  
pAdc  
pAdc  
pAdc  
ID(off)  
6 Lake Street, Lawrence, MA 01841  
022802  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

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