Datasheet > JAN2N5238

JAN2N5238

更新时间： 2024-09-29 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
21页	100K
描述
TRANSISTOR \| BJT \| NPN \| 170V V(BR)CEO \| 5A I(C) \| TO-5

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JAN2N5238 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 5 October 2002.

INCH-POUND

MIL-PRF-19500/394G

5 July 2002

SUPERSEDING

MIL-PRF-19500/394F

23 April 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING

TYPES: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, AND 2N5238S

JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage

transistors. Four levels of product assurance are provided for each encapsulated device type as specified in

MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (TO- 5) and figures 2 and 3 (JANHC and JANKC).

1.3 Maximum ratings.

Types

CBO

CEO

EBO

and

R_qJC

(max)

R_qJA

(min)

T (1)

T (2)

STG

= +25°C

+25°C

V dc

A dc

°C

°C/mW

2N4150, S

2N5237, S

2N5238, S

1.0

5.0

100

150

200

120

170

-65 to +200

.020

.175

(1) Derate linearly 5.7 mW/°C for T_A> +25°C.

(2) Derate linearly 50 mW/°C for T_C> +100°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.

Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form

1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...21

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JAN2N5303	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 20A I(C) \| TO-3
JAN2N5339	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 5A I(C) \| TO-39
JAN2N5339U3	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA
JAN2N539	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 3.5A I(C) \| STR-8
JAN2N539A	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 3.5A I(C) \| STR-8
JAN2N5415	MICROSEMI	获取价格	PNP LOW POWER SILICON TRANSISTOR