Datasheet > JAN2N5152

JAN2N5152

更新时间： 2024-09-24 23:16:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	62K
描述
NPN POWER SILICON TRANSISTOR

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中文翻译

获取价格

数据手册
替代型号

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JAN2N5152 数据手册

TECHNICAL DATA

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 544

Devices

Qualified Level

JAN

JANTX

JANTXV

2N5152

2N5152L

2N5154

2N5154L

MAXIMUM RATINGS

Ratings

Symbol

V_CEO

All Units

Units

Vdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

100

Vdc

V_CBO

5.5

Vdc

V_EBO

(3, 4)

TO- 5*

2N5152L, 2N5154L

2.0

Adc

I_C

Total Power Dissipation

@ T_A= +25⁰C⁽¹⁾

@ T_C= +25⁰C⁽²⁾

1.0

11.8

P_T

T_j_,T

Operating & Storage Temperature Range

-65 to +200

°C

stg

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance, Junction-to-Case

1) Derate linearly 5.7 mW/⁰C for T_A> +25⁰C

2) Derate linearly 66.7 mW/⁰C for T_C> +25⁰C

3) Derate linearly 80 mW/⁰C for T_C> +25⁰C

4) This value applies for P_W£ 8.3 ms, duty cycle £ 1%

Symbol

Max.

Unit

⁰C/W

qJC

2N5152, 2N5154

TO-39*

(TO-205AD)

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 100 mAdc, I_B= 0

Emitter-Base Cutoff Current

V_EB= 4.0 Vdc, I_C= 0

Symbol

V_(BR)CEO

I_EBO

Min.

Max.

Unit

Vdc

1.0

mAdc

V_EB= 5.5 Vdc, I_C= 0

Collector-Emitter Cutoff Current

V_CE= 60 Vdc, V_BE= 0

V_CE= 100 Vdc, V_BE= 0

1.0

mAdc

I_CES

Collector-Base Cutoff Current

V_CE= 40 Vdc, I_B= 0

I_CEO

mAdc

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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JAN2N5152 替代型号

型号	品牌	替代类型	描述	数据表
JANTX2N5152	MICROSEMI	完全替代	NPN POWER SILICON TRANSISTOR

与JAN2N5152相关器件

型号	品牌	获取价格	描述	数据表
JAN2N5152L	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
JAN2N5153	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR
JAN2N5153L	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR
JAN2N5153U3	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR
JAN2N5154	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
JAN2N5154L	MICROSEMI	获取价格	NPN POWER SILICON TRANSISTOR
JAN2N5154U3	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), NPN,
JAN2N5157	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 500V V(BR)CEO \| 3.5A I(C) \| TO-3
JAN2N5206E3	MICROSEMI	获取价格	Silicon Controlled Rectifier, SCR
JAN2N5237	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 5A I(C) \| TO-5