Datasheet > JAN2N5157

JAN2N5157

更新时间： 2024-09-29 23:59:59

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页数	文件大小	规格书
17页	82K
描述
TRANSISTOR \| BJT \| NPN \| 500V V(BR)CEO \| 3.5A I(C) \| TO-3

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JAN2N5157 数据手册

The documentation and process conversion measures

necessary to comply with this revision shall

be completed by 22 October 1999

INCH-POUND

MIL-PRF-19500/371D

23 July 1999

SUPERSEDING

MIL-S-19500/371C

27 March 1995

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER

TYPES 2N3902 AND 2N5157

JAN AND JANTX

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistors. Two levels of product

assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (similar to TO-3), (see 3.3).

1.3 Maximum ratings.

Type

and T

°C

CBO

CEO

EBO

STG

= +25 C

= +75°C

V dc

A dc

°C/W

2N3902

2N5157

5.0

100

700

400

500

5.0

6.0

2.0

3.5

-65 to +200

1.25

1/ Derate linearly 29 mW/°C above T = +25°C.

2/ Derate linearly 0.8 W/°C above T = +75°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...17

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JAN2N5339	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 5A I(C) \| TO-39