Datasheet > JAN2N4930U4

JAN2N4930U4

更新时间： 2024-11-18 15:44:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
24页	698K
描述
Transistor

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技术参数
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JAN2N4930U4 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	0.2 A
最小直流电流增益 (hFE)：	50	最高工作温度：	200 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	1 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

JAN2N4930U4 数据手册

INCH-POUND

The documentation and process conversion measures

necessary to comply with this document shall be

completed by 4 May 2010.

MIL-PRF-19500/397J

4 February 2010

SUPERSEDING

MIL-PRF-19500/397H

17 June 2004

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON,

TYPES 2N3743, 2N3743U4, 2N4930, 2N4930U4, 2N4931, AND 2N4931U4,

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP, silicon, high-voltage transistor.

Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of

product assurance for die are provided for each unencapsulated device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (TO-39), figure 2 (U4), and figures 3 and 4 for JANHC and JANKC (die)

dimensions.

1.3 Maximum ratings. Unless otherwise specified, T_A= +25°C.

R_θJA

(2)

R_θJPCB

(2)

R_θJC

(2)

Type

P_T(1)

T_A=

+25°C

P_T(1)

T_PCB

P_T(1)

T_C=

+25°C

V_CBO

V_EBO

V_CEO

I_C

T_Jand

T_STG

+25°C

°C/W

175

°C/W

V dc

300

200

250

300

200

250

V dc

300

200

250

300

200

250

mA dc

200

°C

2N3743

1.0

2N4930

1.0

2N4931

1.0

-65 to

+200

175

2N3743U4

2N4930U4

2N4931U4

1.0

* (1) For derating see figures 5, 6, 7, and 8.

* (2) For thermal impedance curves see figures 9, 10, and 11.

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this

address information using the ASSIST Online database at https://assist.daps.dla.mil .

AMSC N/A

FSC 5961

12 3 4 5 6 7...24

中文翻译

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与JAN2N4930U4相关器件

型号	品牌	获取价格	描述	数据表
JAN2N4931U4	MICROSEMI	获取价格	Transistor
JAN2N4957	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 30MA I(C) \| TO-72
JAN2N4957UB	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 30MA I(C) \| LLCC
JAN2N5002	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 5A I(C) \| TO-210AA
JAN2N5003	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-210AA
JAN2N5004	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 5A I(C) \| TO-210AA
JAN2N5005	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-210AA
JAN2N5011	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
JAN2N5011S	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JAN2N5012S	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,

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