Datasheet > JAN2N4150

JAN2N4150

更新时间： 2024-02-21 02:18:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
21页	100K
描述
TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 5A I(C) \| TO-5

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技术参数
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JAN2N4150 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Is Samacsys：	N	最大集电极电流 (IC)：	5 A
配置：	Single	最小直流电流增益 (hFE)：	40
最高工作温度：	175 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	5 W	子类别：	Other Transistors
表面贴装：	NO	标称过渡频率 (fT)：	15 MHz
Base Number Matches：	1

JAN2N4150 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 5 October 2002.

INCH-POUND

MIL-PRF-19500/394G

5 July 2002

SUPERSEDING

MIL-PRF-19500/394F

23 April 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING

TYPES: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, AND 2N5238S

JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage

transistors. Four levels of product assurance are provided for each encapsulated device type as specified in

MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (TO- 5) and figures 2 and 3 (JANHC and JANKC).

1.3 Maximum ratings.

Types

CBO

CEO

EBO

and

R_qJC

(max)

R_qJA

(min)

T (1)

T (2)

STG

= +25°C

+25°C

V dc

A dc

°C

°C/mW

2N4150, S

2N5237, S

2N5238, S

1.0

5.0

100

150

200

120

170

-65 to +200

.020

.175

(1) Derate linearly 5.7 mW/°C for T_A> +25°C.

(2) Derate linearly 50 mW/°C for T_C> +100°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.

Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form

1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...21

中文翻译

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与JAN2N4150相关器件

型号	品牌	获取价格	描述	数据表
JAN2N4150S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 5A I(C) \| TO-39
JAN2N4234	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 1A I(C) \| TO-5
JAN2N4235	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 1A I(C) \| TO-5
JAN2N4236	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1A I(C) \| TO-5
JAN2N4237	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JAN2N4238	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JAN2N4239	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JAN2N425	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 400MA I(C) \| TO-5
JAN2N426	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 18V V(BR)CEO \| 400MA I(C) \| TO-5
JAN2N4261	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 15V V(BR)CEO \| 30MA I(C) \| TO-72

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