生命周期: | Obsolete | 包装说明: | POST/STUD MOUNT, O-MUPM-D3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.1 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-111 |
JESD-30 代码: | O-MUPM-D3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 2 W | 认证状态: | Not Qualified |
参考标准: | MIL | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | SOLDER LUG |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 60 MHz | VCEsat-Max: | 0.25 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N3999 | MICROSEMI |
获取价格 |
NPN POWER SWITCHING SILICON TRANSISTOR | |
JAN2N3999 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 | |
JAN2N4026 | MOTOROLA |
获取价格 |
1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18, TO-206AA, 3 PIN | |
JAN2N4029 | RAYTHEON |
获取价格 |
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39, | |
JAN2N4033 | RAYTHEON |
获取价格 |
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39, | |
JAN2N4033UA | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC P | |
JAN2N4033UB | ETC |
获取价格 |
BJT | |
JAN2N404 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 100MA I(C) | TO-5 | |
JAN2N404A | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 150MA I(C) | TO-5 | |
JAN2N4091 | MICROSEMI |
获取价格 |
N-CHANNEL J-FET Qualified per MIL-PRF-19500/431 |