Datasheet > JAN2N3960

JAN2N3960

更新时间： 2024-11-26 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
16页	66K
描述
TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| TO-18

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JAN2N3960 数据手册

The documentation and process conversion measures necessary to

comply with this document shall be completed by 20 May 2002.

INCH-POUND

MIL-PRF-19500/399D

20 February 2002

SUPERSEDING

MIL-PRF-19500/399C

29 May 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING

TYPE 2N3960 AND 2N3960UB

JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN silicon, switching transistors. Four

levels of product assurance are provided for each device type and two levels for unencapsulated chips as specified

in MIL-PRF-19500.

1.2 Physical dimensions. See figures 1 (TO-18), figure 2 (UB), and figure 3 (JANHC, JANKC).

1.3 Maximum ratings.

P_T(1)

V_CBO

V_CEO

V_EBO

T_Jand T_STG

T_A= +25°C

400

V dc

4.5

°C

-65 to +200

(1) Derate linearly 2.3 mW/°C above T_A= +25°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.

Box 3990, Columbus, OH 43216-5000 by using the Standardization Document Improvement Proposal (DD Form

1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...16

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与JAN2N3960相关器件

型号	品牌	获取价格	描述	数据表
JAN2N3960UB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 12V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-3
JAN2N396A	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 200MA I(C) \| TO-5
JAN2N398A	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 105V V(BR)CEO \| 200MA I(C) \| TO-5
JAN2N3996	MICROSEMI	获取价格	NPN POWER SWITCHING SILICON TRANSISTOR
JAN2N3996	APITECH	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4
JAN2N3997	MICROSEMI	获取价格	NPN POWER SWITCHING SILICON TRANSISTOR
JAN2N3997	APITECH	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4
JAN2N3998	MICROSEMI	获取价格	NPN POWER SWITCHING SILICON TRANSISTOR
JAN2N3998	APITECH	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3
JAN2N3999	MICROSEMI	获取价格	NPN POWER SWITCHING SILICON TRANSISTOR