是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
包装说明: | SMALL OUTLINE, R-XDSO-N6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
Factory Lead Time: | 32 weeks | 风险等级: | 5.12 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.05 A |
集电极-发射极最大电压: | 60 V | 配置: | SEPARATE, 2 ELEMENTS |
最小直流电流增益 (hFE): | 250 | JESD-30 代码: | R-XDSO-N6 |
元件数量: | 2 | 端子数量: | 6 |
最高工作温度: | 200 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.6 W | 认证状态: | Qualified |
参考标准: | MIL-19500/336G | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N3821 | MICROSEMI |
获取价格 |
TECHNICAL DATA |
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JAN2N3822 | MICROSEMI |
获取价格 |
TECHNICAL DATA |
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JAN2N3823 | MICROSEMI |
获取价格 |
TECHNICAL DATA |
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JAN2N3838 | ETC |
获取价格 |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 600MA I(C) | TO-89 |
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JAN2N3846 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR |
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JAN2N3847 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR |
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JAN2N3866 | RAYTHEON |
获取价格 |
RF Small Signal Bipolar Transistor, 1-Element, Silicon, TO-39, |
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JAN2N3866A | RAYTHEON |
获取价格 |
RF Small Signal Bipolar Transistor, 1-Element, Silicon, TO-39, |
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JAN2N3866AUB | ETC |
获取价格 |
BJT |
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JAN2N3866UB | ETC |
获取价格 |
BJT |
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