5秒后页面跳转
JAN2N3811U PDF预览

JAN2N3811U

更新时间: 2024-02-25 04:41:11
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
17页 91K
描述
TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 50MA I(C) | TO-78

JAN2N3811U 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
包装说明:SMALL OUTLINE, R-XDSO-N6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:32 weeks风险等级:5.12
Is Samacsys:N最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:60 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):250JESD-30 代码:R-XDSO-N6
元件数量:2端子数量:6
最高工作温度:200 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.6 W认证状态:Qualified
参考标准:MIL-19500/336G子类别:Other Transistors
表面贴装:YES端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

JAN2N3811U 数据手册

 浏览型号JAN2N3811U的Datasheet PDF文件第2页浏览型号JAN2N3811U的Datasheet PDF文件第3页浏览型号JAN2N3811U的Datasheet PDF文件第4页浏览型号JAN2N3811U的Datasheet PDF文件第5页浏览型号JAN2N3811U的Datasheet PDF文件第6页浏览型号JAN2N3811U的Datasheet PDF文件第7页 
The documentation and process conversion measures necessary to  
comply with this document shall be completed by 4 April, 2002.  
INCH-POUND  
MIL-PRF-19500/396H  
4 January 2002  
SUPERSEDING  
MIL-PRF-19500/396G  
21 April 2000  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING  
TYPES 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, AND 2N3765  
JAN, JANTX, JANTXV, JANS, JANHC AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Four  
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two  
levels of product assurance are provided for each unencapsulated device type.  
1.2 Physical dimensions. See figure 1, 2N3762L and 2N3763L (TO-5), 2N3762 and 2N3763 (TO-39), 2N3764  
and 2N3765 (TO - 46) and figure 2 (die) herein.  
1.3 Maximum ratings.  
Types  
PT  
VCBO  
V dc  
VCEO  
V dc  
VEBO  
V dc  
IC  
TOP and TSTG  
R
θJC  
TA = +25°C  
W
A dc  
°C  
°C/W  
2N3762  
2N3762L  
2N3763  
2N3763L  
2N3764  
2N3765  
1.0 (1)  
1.0 (1)  
1.0 (1)  
1.0 (1)  
0.5 (2)  
0.5 (2)  
40  
40  
60  
60  
40  
60  
40  
40  
60  
60  
40  
60  
5
5
5
5
5
5
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
-65 to +200  
-65 to +200  
-65 to +200  
-65 to +200  
-65 to +200  
-65 to +200  
60  
60  
60  
60  
88  
88  
(1) Derate linearly at 5.71 mW/°C above TA = +25°C.  
(2) Derate linearly at 2.86 mW/°C above TA = +25°C.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P. O.  
Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form  
1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  

与JAN2N3811U相关器件

型号 品牌 获取价格 描述 数据表
JAN2N3821 MICROSEMI

获取价格

TECHNICAL DATA
JAN2N3822 MICROSEMI

获取价格

TECHNICAL DATA
JAN2N3823 MICROSEMI

获取价格

TECHNICAL DATA
JAN2N3838 ETC

获取价格

TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 600MA I(C) | TO-89
JAN2N3846 MICROSEMI

获取价格

NPN POWER SILICON TRANSISTOR
JAN2N3847 MICROSEMI

获取价格

NPN POWER SILICON TRANSISTOR
JAN2N3866 RAYTHEON

获取价格

RF Small Signal Bipolar Transistor, 1-Element, Silicon, TO-39,
JAN2N3866A RAYTHEON

获取价格

RF Small Signal Bipolar Transistor, 1-Element, Silicon, TO-39,
JAN2N3866AUB ETC

获取价格

BJT
JAN2N3866UB ETC

获取价格

BJT