Datasheet > JAN2N3765

JAN2N3765

更新时间： 2024-09-28 22:51:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体开关晶体管
页数	文件大小	规格书
2页	64K
描述
PNP SWITCHING SILICON TRANSISTOR

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数据手册

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JAN2N3765 数据手册

TECHNICAL DATA

PNP SWITCHING SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 396

Devices

Qualified Level

JAN

JANTX

JANTXV

2N3762

2N3762L

2N3763

2N3763L

2N3764

2N3765

MAXIMUM RATINGS

Ratings

2N3762* 2N3763*

Symbol

Unit

2N3764

2N3765

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Vdc

V_CEO

V_CBO

V_EBO

I_C

TO-39* (TO-205AD)

5.0

1.5

Vdc

2N3762, 2N3763

Adc

2N3762* ¹2N3764 ²

2N3763*

2N3765

Total Power Dissipation @ T_A= +25⁰C

Operating & Storage Junction Temp. Range

1.0

0.5

P_T

-55 to +200

⁰C

T_op_,T

stg

TO-5*

THERMAL CHARACTERISTICS

Characteristics

2N3762L, 2N3763L

Symbol

Max.

2N3762*

2N3763*

Unit

2N3764

2N3765

Thermal Resistance Junction-to-Case

⁰C/W

qJC

TO-46* (TO-206AB)

2N3764, 2N3765

*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices

1) Derate linearly at 5.71 mW/⁰C for T_A> +25⁰C

2) Derate linearly at 2.86 mW/⁰C for T_A> +25⁰C

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

I_C= 10 mAdc

Vdc

2N3762, 2N3764

2N3763, 2N3765

V_(BR)

CEO

Collector-Base Cutoff Current

V_CB= 20 Vdc

V_CB= 30 Vdc

V_CB= 40 Vdc

V_CB= 60 Vdc

100

2N3762, 2N3764

2N3763, 2N3765

2N3762, 2N3764

2N3763, 2N3765

hAdc

mAdc

I_CBO

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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JAN2N3810U	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| PNP \| 60V V(BR)CEO \| 50MA I(C) \| TO-78
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