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JAN2N3739

更新时间: 2024-01-13 18:37:38
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页数 文件大小 规格书
15页 83K
描述
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 250MA I(C) | TO-66

JAN2N3739 技术参数

生命周期:Active零件包装代码:TO-66
包装说明:SIMILAR TO TO-66, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.2外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):10
JESD-30 代码:O-MBFM-P2元件数量:1
端子数量:2封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Qualified
参考标准:MIL-19500/402D表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
晶体管元件材料:SILICONBase Number Matches:1

JAN2N3739 数据手册

 浏览型号JAN2N3739的Datasheet PDF文件第2页浏览型号JAN2N3739的Datasheet PDF文件第3页浏览型号JAN2N3739的Datasheet PDF文件第4页浏览型号JAN2N3739的Datasheet PDF文件第5页浏览型号JAN2N3739的Datasheet PDF文件第6页浏览型号JAN2N3739的Datasheet PDF文件第7页 
This documentation process conversion measures necessary to  
comply with this revision shall be completed by 30 October 1999.  
INCH-POUND  
MIL-PRF-19500/402C  
30 August 1999  
SUPERSEDING  
MIL-S-19500/402B  
8 April 1993  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER  
TYPE 2N3739  
JAN, JANTX AND JANTXV  
This specification is approved for use by all Depart-  
ments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product  
assurance are provided for each device type as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figure 1 (similar to TO-66)  
1.3 Maximum ratings.  
Types  
P
1/  
P
2/  
V
V
V
I
T
and T  
C
R
T
T
CBO  
CEO  
EBO  
B
STG  
J
I
JC  
C
T
= +25 C  
T
= +100 C  
C
C
W
W
V dc  
325  
V dc  
300  
V dc  
6.0  
A dc  
0.5  
A dc  
1.0  
C/W  
7.5  
2N3739  
20  
10  
-55 to +200  
1/ Derate linearly, 0.114 W/ C for TC +25 C.  
2/ Derate linearly, 0.100 W/ C for TC +100 C.  
1.4 Primary electrical characteristics at TA = 25 C.  
Switching  
h
FE1  
1/  
h
FE3  
1/  
V
V
C
obo  
|h |  
fe  
BE  
CE(SAT)  
Limit  
V
= 10 V dc  
V
= 10 V dc  
V
= 10 V dc  
I
= 250 mA dc  
= 25 mA dc  
V
= 100 V dc  
V = 10 V dc  
CE  
CE  
CE  
CE  
C
CB  
t
t
off  
on  
I
= 10 mA dc I = 100 mA dc I = 100 mA dc  
I
I
= 0 mA dc  
I
C
= 100 mA dc  
f = 10 MHz  
C
C
C
B
E
100 kHz f 1 MHz  
V dc  
1
V dc  
2.5  
pF  
s
s
Min  
Max  
30  
40  
200  
1
6
20  
1.5  
3.5  
1/ Pulsed (see 4.5.1)  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this  
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street,  
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end  
of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  

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