Datasheet > JAN2N3700UB

JAN2N3700UB

更新时间： 2024-11-10 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
24页	153K
描述
TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 1A I(C)

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JAN2N3700UB 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 15 October 2002.

INCH-POUND

MIL-PRF-19500/391G

15 July 2002

SUPERSEDING

MIL-PRF-19500/391F

26 March 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER

TYPES 2N3019, 2N3019S, 2N3057A, 2N3700, AND 2N3700UB

JAN, JANTX, JANTXV, JANS, JANHC2N3700 AND JANKC2N3700

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four

levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product

assurance are provided for the unencapsulated device type 2N3700.

1.2 Physical dimensions. See figure 1, 2N3019 (TO-5), 2N3019S (similar to TO-39), figure 2, 2N3057A (TO-46),

figure 3, 2N3700 (TO-18), figure 4, 2N3700UB, and figure 5, JANHCA2N3700,.and JANKCA2N3700.

1.3 Maximum ratings.

Type

P_T

V_CBO

V_EBO

V_CEO

I_C

T_Jand T_STG

qJA

T_A= +25°C

T_C= +25°C

(1)

V dc

A dc

°C

°C/W

2N3019

0.8 (2)

0.5 (3)

1.8

1.16

140

-65 to +200

175

325

2N3019S

2N3057A

2N3700

2N3700UB

(1) Derate linearly at 28.6 mW/°C for types 2N3019 and 2N3019S; 10.3 mW/°C for types 2N3057A and 2N3700;

6.63 mW/°C for 2N3700UB, for T_C³ +25°C.

(2) Derate linearly at 5.7 mW/°C above T_A= +60°C.

(3) Derate linearly at 3.08 mW/°C above T_A= +37.5°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P.O.

Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form

1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...24

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型号	品牌	获取价格	描述	数据表
JAN2N3715	MICROSEMI	获取价格	NPN HIGH POWER SILICON TRANSISTOR
JAN2N3716	MICROSEMI	获取价格	NPN HIGH POWER SILICON TRANSISTOR
JAN2N3735	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39,
JAN2N3735L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1.5A I(C) \| TO-5VAR
JAN2N3737	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39,
JAN2N3737UB	ETC	获取价格	BJT
JAN2N3739	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 250MA I(C) \| TO-66
JAN2N3740	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR
JAN2N3741	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR
JAN2N3743	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,