Datasheet > JAN2N3715

JAN2N3715

更新时间： 2024-01-16 13:32:21

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管开关局域网高功率电源
页数	文件大小	规格书
2页	58K
描述
NPN HIGH POWER SILICON TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册
替代型号

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JAN2N3715 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.82

JAN2N3715 数据手册

TECHNICAL DATA

NPN HIGH POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 408

Devices

Qualified Level

JAN

2N3715

2N3716

JANTX

JANTXV

MAXIMUM RATINGS

Symbol 2N3715

Units

Vdc

Adc

Ratings

2N3716

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

V_CEO

V_CBO

V_EBO

I_B

100

7.0

4.0

Collector Current

I_C

Total Power Dissipation

@ T_A= 25⁰C

@ T_C=100⁰C

5.0

85.7

⁰C

P_T

Operating & Storage Junction Temperature Range

-65 to +200

T_J_,T

stg

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance, Junction-to-Case

Symbol

Max.

1.17

Unit

TO-3* (TO-204AA)

⁰C/W

qJC

1) Derate linearly 28.57 mW/⁰C for T_A>25⁰C

2) Derate linearly 0.857 W/⁰C for T_C>100⁰C

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

I_C= 10 mAdc

Symbol

Min.

Max.

Unit

Vdc

2N3715

2N3716

V_(BR)

CEO

Collector-Base Cutoff Current

V_CB= 80 Vdc

V_CB= 100 Vdc

mAdc

2N3715

2N3716

I_CBO

Emitter-Base Breakdown Voltage

V_EB= 7.0 Vdc

1.0

mAdc

I_EBO

I_CEX

Collector-Emitter Cutoff Current

V_BE= 1.5 Vdc, V_CE= 60 Vdc

V_BE= 1.5 Vdc, V_CE= 80 Vdc

1.0

2N3715

2N3716

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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JAN2N3715 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV2N3715	MICROSEMI	完全替代	NPN HIGH POWER SILICON TRANSISTOR
JANTXV2N3716	MICROSEMI	类似代替	NPN HIGH POWER SILICON TRANSISTOR
JANTX2N3716	MICROSEMI	类似代替	NPN HIGH POWER SILICON TRANSISTOR

与JAN2N3715相关器件

型号	品牌	获取价格	描述	数据表
JAN2N3716	MICROSEMI	获取价格	NPN HIGH POWER SILICON TRANSISTOR
JAN2N3735	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39,
JAN2N3735L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1.5A I(C) \| TO-5VAR
JAN2N3737	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39,
JAN2N3737UB	ETC	获取价格	BJT
JAN2N3739	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 250MA I(C) \| TO-66
JAN2N3740	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR
JAN2N3741	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR
JAN2N3743	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,
JAN2N3743U4	MICROSEMI	获取价格	Transistor