JANTXV2N3716

更新时间： 2024-02-24 23:56:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管功率双极晶体管开关局域网高功率电源
页数	文件大小	规格书
2页	58K
描述
NPN HIGH POWER SILICON TRANSISTOR

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

JANTXV2N3716 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.77
Is Samacsys：	N	Base Number Matches：	1

JANTXV2N3716 数据手册

TECHNICAL DATA

NPN HIGH POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 408

Devices

Qualified Level

JAN

2N3715

2N3716

JANTX

JANTXV

MAXIMUM RATINGS

Symbol 2N3715

Units

Vdc

Adc

Ratings

2N3716

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

V_CEO

V_CBO

V_EBO

I_B

100

7.0

4.0

Collector Current

I_C

Total Power Dissipation

@ T_A= 25⁰C

@ T_C=100⁰C

5.0

85.7

⁰C

P_T

Operating & Storage Junction Temperature Range

-65 to +200

T_J_,T

stg

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance, Junction-to-Case

Symbol

Max.

1.17

Unit

TO-3* (TO-204AA)

⁰C/W

qJC

1) Derate linearly 28.57 mW/⁰C for T_A>25⁰C

2) Derate linearly 0.857 W/⁰C for T_C>100⁰C

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

I_C= 10 mAdc

Symbol

Min.

Max.

Unit

Vdc

2N3715

2N3716

V_(BR)

CEO

Collector-Base Cutoff Current

V_CB= 80 Vdc

V_CB= 100 Vdc

mAdc

2N3715

2N3716

I_CBO

Emitter-Base Breakdown Voltage

V_EB= 7.0 Vdc

1.0

mAdc

I_EBO

I_CEX

Collector-Emitter Cutoff Current

V_BE= 1.5 Vdc, V_CE= 60 Vdc

V_BE= 1.5 Vdc, V_CE= 80 Vdc

1.0

2N3715

2N3716

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

中文翻译

下载PDF

JANTXV2N3716 替代型号

型号	品牌	替代类型	描述	数据表
JAN2N3715	MICROSEMI	类似代替	NPN HIGH POWER SILICON TRANSISTOR
2N3714LEADFREE	CENTRAL	功能相似	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2

与JANTXV2N3716相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N3735	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39,
JANTXV2N3735L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1.5A I(C) \| TO-5VAR
JANTXV2N3737	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39,
JANTXV2N3737UB	ETC	获取价格	BJT
JANTXV2N3739	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 250MA I(C) \| TO-66
JANTXV2N3740	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR
JANTXV2N3741	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR
JANTXV2N3743	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 300V V(BR)CEO \| 50MA I(C) \| TO-39
JANTXV2N3743U4	MICROSEMI	获取价格	Transistor
JANTXV2N3749	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR