Datasheet > JAN2N336AT2

JAN2N336AT2

更新时间： 2024-11-01 23:59:59

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其他 - ETC		/
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JAN2N336AT2 数据手册

MIL-S-19500/37E

16 September 2001

SUPERSEDING

The documentation and process conversion measures necessary to comply

with this document shall be completed by 16 December, 2001.

MIL-S-19500/37D

22 November 1971

MILITARY SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N333, 2N335, 2N336,

2N333A, 2N335A, 2N336A, 2N333T2, 2N335T2, 2N336T2, 2N333LT2, 2N335LT2, 2N336LT2

2N333AT2, 2N335AT2, 2N336AT2, 2N333ALT2, 2N335ALT2, AND 2N336ALT2, JAN

Inactive for new design after 7 June 1999

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the detail requirements for silicon, NPN, low-power transistors.

* 1.2 Physical dimensions. See figure 1 (TO-5 for isolated leads only) and figure 2 (TO-205AA).

* 1.3 Maximum ratings.

P_T

V_EBO

T_stg

V_CEO

V_CBO

T_A= 25°C

2N333, T2, LT2

2N333A, T2, LT2

2N335A, T2, LT2

2N336A, T2, LT2

2N333, T2, LT2 2N333A, T2, LT2 2N333, T2, LT2 2N333A, T2, LT2

2N335, T2, LT2 2N335A, T2, LT2 2N335, T2, LT2 2N335A, T2, LT2

2N336, T2, LT2 2N336A, T2, LT2 2N336, T2, LT2 2N336A, T2, LT2

2N335, T2, LT2

2N336, T2, LT2

V dc

°C

(1) 150

(2) 500

-65 to +175

(1) Derate approximately 1 mW/°C for T_Abetween +25°C and +175°C.

(2) Derate approximately 3.33 mW/°C for T_Abetween +25°C and +175°C.

* 1.4 Primary electrical characteristics.

h_fe

V_CB= 5 V dc, I_E= -1 mA

Limits

f_hfb

C_obo

V_CB= 5 V dc

I_E= 0 mA dc

V_CB= 5 V dc

I_E= -1 mA dc

2N333, T2, LT2

2N333A, T2, LT2

2N335, T2, LT2

2N335A, T2, LT2

2N336, T2, LT2

2N336A, T2, LT2

100kHz ≤ f ≤ 1 MHz

MHz

2.5

Min

Max

270

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD

Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...14

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与JAN2N336AT2相关器件

型号	品牌	获取价格	描述	数据表
JAN2N336LT2	ETC	获取价格	BJT
JAN2N336T2	ETC	获取价格	BJT
JAN2N3418	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JAN2N3418S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C)
JAN2N3419	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JAN2N3419	VISHAY	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P
JAN2N3419S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 3A I(C) \| TO-39
JAN2N3419U4	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC
JAN2N3420	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JAN2N3420	VISHAY	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P

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