Datasheet > JAN2N336T2

JAN2N336T2

更新时间： 2024-11-01 23:59:59

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
14页	68K
描述
BJT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JAN2N336T2 数据手册

MIL-S-19500/37E

16 September 2001

SUPERSEDING

The documentation and process conversion measures necessary to comply

with this document shall be completed by 16 December, 2001.

MIL-S-19500/37D

22 November 1971

MILITARY SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N333, 2N335, 2N336,

2N333A, 2N335A, 2N336A, 2N333T2, 2N335T2, 2N336T2, 2N333LT2, 2N335LT2, 2N336LT2

2N333AT2, 2N335AT2, 2N336AT2, 2N333ALT2, 2N335ALT2, AND 2N336ALT2, JAN

Inactive for new design after 7 June 1999

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the detail requirements for silicon, NPN, low-power transistors.

* 1.2 Physical dimensions. See figure 1 (TO-5 for isolated leads only) and figure 2 (TO-205AA).

* 1.3 Maximum ratings.

P_T

V_EBO

T_stg

V_CEO

V_CBO

T_A= 25°C

2N333, T2, LT2

2N333A, T2, LT2

2N335A, T2, LT2

2N336A, T2, LT2

2N333, T2, LT2 2N333A, T2, LT2 2N333, T2, LT2 2N333A, T2, LT2

2N335, T2, LT2 2N335A, T2, LT2 2N335, T2, LT2 2N335A, T2, LT2

2N336, T2, LT2 2N336A, T2, LT2 2N336, T2, LT2 2N336A, T2, LT2

2N335, T2, LT2

2N336, T2, LT2

V dc

°C

(1) 150

(2) 500

-65 to +175

(1) Derate approximately 1 mW/°C for T_Abetween +25°C and +175°C.

(2) Derate approximately 3.33 mW/°C for T_Abetween +25°C and +175°C.

* 1.4 Primary electrical characteristics.

h_fe

V_CB= 5 V dc, I_E= -1 mA

Limits

f_hfb

C_obo

V_CB= 5 V dc

I_E= 0 mA dc

V_CB= 5 V dc

I_E= -1 mA dc

2N333, T2, LT2

2N333A, T2, LT2

2N335, T2, LT2

2N335A, T2, LT2

2N336, T2, LT2

2N336A, T2, LT2

100kHz ≤ f ≤ 1 MHz

MHz

2.5

Min

Max

270

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD

Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...14

中文翻译

下载PDF

与JAN2N336T2相关器件

型号	品牌	获取价格	描述	数据表
JAN2N3418	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JAN2N3418S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C)
JAN2N3419	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JAN2N3419	VISHAY	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P
JAN2N3419S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 3A I(C) \| TO-39
JAN2N3419U4	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC
JAN2N3420	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JAN2N3420	VISHAY	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P
JAN2N3420S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| TO-5
JAN2N3420U4	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC

与JAN2N336T2相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

6
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

3
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

JAN2N336T2

JAN2N336T2 数据手册

与JAN2N336T2相关器件

与JAN2N336T2相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JAN2N336T2

JAN2N336T2 数据手册

与JAN2N336T2相关器件

与JAN2N336T2相关文章

您还可以找

您在本页遇到什么问题？