生命周期: | Transferred | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.07 | 最大集电极电流 (IC): | 3 A |
基于收集器的最大容量: | 150 pF | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 20 |
JEDEC-95代码: | TO-5 | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 功耗环境最大值: | 15 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 40 MHz | 最大关闭时间(toff): | 1200 ns |
最大开启时间(吨): | 300 ns | VCEsat-Max: | 0.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N3419S | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-39 | |
JAN2N3419U4 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC | |
JAN2N3420 | MICROSEMI |
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Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI | |
JAN2N3420 | VISHAY |
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Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P | |
JAN2N3420S | ETC |
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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-5 | |
JAN2N3420U4 | MICROSEMI |
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Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC | |
JAN2N3421 | VISHAY |
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暂无描述 | |
JAN2N3421S | ETC |
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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-5 | |
JAN2N3421U4 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC | |
JAN2N3439 | MICROSEMI |
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This family of high-frequency, epitaxial planar transistors feature low saturation voltage |