是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-5 |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.11 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JEDEC-95代码: | TO-5 | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Qualified | 参考标准: | MIL-19500/393E |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 1300 ns |
最大开启时间(吨): | 300 ns | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANS2N5154 | MICROSEMI |
类似代替 |
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2N3419S | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-39 | |
JAN2N3419U4 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC | |
JAN2N3420 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI | |
JAN2N3420 | VISHAY |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P | |
JAN2N3420S | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-5 | |
JAN2N3420U4 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC | |
JAN2N3421 | VISHAY |
获取价格 |
暂无描述 | |
JAN2N3421S | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-5 | |
JAN2N3421U4 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC | |
JAN2N3439 | MICROSEMI |
获取价格 |
This family of high-frequency, epitaxial planar transistors feature low saturation voltage |