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JAN2N336ALT2 PDF预览

JAN2N336ALT2

更新时间： 2024-11-30 23:59:59
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
14页 68K
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BJT

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JAN2N336ALT2 数据手册

 浏览型号JAN2N336ALT2的Datasheet PDF文件第2页浏览型号JAN2N336ALT2的Datasheet PDF文件第3页浏览型号JAN2N336ALT2的Datasheet PDF文件第4页浏览型号JAN2N336ALT2的Datasheet PDF文件第5页浏览型号JAN2N336ALT2的Datasheet PDF文件第6页浏览型号JAN2N336ALT2的Datasheet PDF文件第7页 
MIL-S-19500/37E  
16 September 2001  
SUPERSEDING  
The documentation and process conversion measures necessary to comply  
with this document shall be completed by 16 December, 2001.  
MIL-S-19500/37D  
22 November 1971  
MILITARY SPECIFICATION  
*
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N333, 2N335, 2N336,  
2N333A, 2N335A, 2N336A, 2N333T2, 2N335T2, 2N336T2, 2N333LT2, 2N335LT2, 2N336LT2  
2N333AT2, 2N335AT2, 2N336AT2, 2N333ALT2, 2N335ALT2, AND 2N336ALT2, JAN  
Inactive for new design after 7 June 1999  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the detail requirements for silicon, NPN, low-power transistors.  
* 1.2 Physical dimensions. See figure 1 (TO-5 for isolated leads only) and figure 2 (TO-205AA).  
* 1.3 Maximum ratings.  
PT  
VEBO  
Tstg  
VCEO  
VCBO  
TA = 25°C  
2N333, T2, LT2  
2N333A, T2, LT2  
2N335A, T2, LT2  
2N336A, T2, LT2  
mW  
2N333, T2, LT2 2N333A, T2, LT2 2N333, T2, LT2 2N333A, T2, LT2  
2N335, T2, LT2 2N335A, T2, LT2 2N335, T2, LT2 2N335A, T2, LT2  
2N336, T2, LT2 2N336A, T2, LT2 2N336, T2, LT2 2N336A, T2, LT2  
2N335, T2, LT2  
2N336, T2, LT2  
mW  
V dc  
45  
V dc  
45  
V dc  
V dc  
°C  
°C  
(1) 150  
(2) 500  
1
4
-65 to +175  
-65 to +175  
(1) Derate approximately 1 mW/°C for TA between +25°C and +175°C.  
(2) Derate approximately 3.33 mW/°C for TA between +25°C and +175°C.  
* 1.4 Primary electrical characteristics.  
hfe  
VCB = 5 V dc, IE = -1 mA  
Limits  
fhfb  
Cobo  
VCB = 5 V dc  
IE = 0 mA dc  
VCB = 5 V dc  
IE = -1 mA dc  
2N333, T2, LT2  
2N333A, T2, LT2  
2N335, T2, LT2  
2N335A, T2, LT2  
2N336, T2, LT2  
2N336A, T2, LT2  
100kHz ≤ f ≤ 1 MHz  
MHz  
2.5  
pF  
15  
Min  
Max  
18  
44  
37  
90  
76  
270  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,  
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD  
Form 1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...14

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JAN2N336AT2 ETC

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 		BJT
JAN2N336LT2 ETC

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JAN2N336T2 ETC

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JAN2N3418 MICROSEMI

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 		Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JAN2N3418S ETC

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 		TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C)
JAN2N3419 MICROSEMI

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 		Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JAN2N3419 VISHAY

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 		Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P
JAN2N3419S ETC

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 		TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-39
JAN2N3419U4 MICROSEMI

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 		Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC
JAN2N3420 MICROSEMI

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 		Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI

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