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JAN1N3595A-1

更新时间: 2024-09-20 15:43:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
20页 262K
描述
Rectifier Diode, 1 Element, 0.15A, 125V V(RRM), Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2

JAN1N3595A-1 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:DO-35包装说明:HERMETIC SEALED, GLASS PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.27外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.7 V
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
JESD-609代码:e0最大非重复峰值正向电流:4 A
元件数量:1端子数量:2
最高工作温度:175 °C最大输出电流:0.15 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.5 W
认证状态:Qualified参考标准:MIL-19500/241
最大重复峰值反向电压:125 V最大反向恢复时间:3 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:AXIALBase Number Matches:1

JAN1N3595A-1 数据手册

 浏览型号JAN1N3595A-1的Datasheet PDF文件第2页浏览型号JAN1N3595A-1的Datasheet PDF文件第3页浏览型号JAN1N3595A-1的Datasheet PDF文件第4页浏览型号JAN1N3595A-1的Datasheet PDF文件第5页浏览型号JAN1N3595A-1的Datasheet PDF文件第6页浏览型号JAN1N3595A-1的Datasheet PDF文件第7页 
INCH-POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 14 January 2014.  
MIL-PRF-19500/241N  
14 November 2013  
SUPERSEDING  
MIL-PRF-19500/241M  
25 January 2010  
PERFORMANCE SPECIFICATION SHEET  
*
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED  
FORWARD VOLTAGE, TYPES 1N3595-1, 1N3595UB, 1N3595UBCA, 1N3595UBD, 1N3595UBCC, 1N3595UB2,  
1N3595UB2R, 1N3595US, 1N3595UR-1, 1N3595A-1,  
1N3595AUS, AND 1N3595AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein  
shall consist of this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for silicon, controlled forward voltage diodes.  
Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of  
product assurance are provided for die.  
1.2 Physical dimensions. See figure 1 (DO-35), figure 2 (UR), figure 3 (US), figure 4 (UB), figure 5 (UB2), figure 6  
(die), and figure 7 (die).  
1.3 Maximum ratings. T = +25°C, unless otherwise specified.  
A
V
I
I
I
R
θJL  
R
θJEC  
R
T and T  
J STG  
RWM  
O
FSM  
FSM  
θJA(PCB)  
(1) (2)  
t = 1 s  
p
L = .375 inch  
(9.53 mm)  
L = 0  
t = 1 µs  
p
V(pk)  
125  
mA dc  
150  
mA (pk)  
500  
A (pk)  
4
°C/W  
°C/W  
°C/W  
°C  
250  
UR  
UB, UB2 100  
US 40  
100  
275  
-65 to +175  
(1) For temperature-current derating curves, see figure 8.  
(2) T = +75°C for both axial and metal electrode leadless face diodes (MELF) (UR, US) on printed circuit  
A
board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air; pads for (UR, US) =  
.061 inch (1.55 mm) x.105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch  
(0.76 mm) x 1 inch (25.4 mm) long, lead length L .187 inch (4.75 mm); R  
with a defined PCB  
θJA  
thermal resistance condition included, is measured at I = 150 mA dc.  
O
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,  
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to  
semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of  
this address information using the ASSIST Online database at https://assist.dla.mil.  
AMSC N/A  
FSC 5961  
 

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