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JAN1N3595UR-1

更新时间： 2024-11-09 05:23:55
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
20页 262K
描述
Rectifier Diode, 1 Element, 0.15A, Silicon, DO-213AA, GLASS, SIMILAR TO DO-213AA, 2 PIN

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JAN1N3595UR-1 数据手册

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INCH-POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 14 January 2014.  
MIL-PRF-19500/241N  
14 November 2013  
SUPERSEDING  
MIL-PRF-19500/241M  
25 January 2010  
PERFORMANCE SPECIFICATION SHEET  
*
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED  
FORWARD VOLTAGE, TYPES 1N3595-1, 1N3595UB, 1N3595UBCA, 1N3595UBD, 1N3595UBCC, 1N3595UB2,  
1N3595UB2R, 1N3595US, 1N3595UR-1, 1N3595A-1,  
1N3595AUS, AND 1N3595AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein  
shall consist of this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for silicon, controlled forward voltage diodes.  
Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of  
product assurance are provided for die.  
1.2 Physical dimensions. See figure 1 (DO-35), figure 2 (UR), figure 3 (US), figure 4 (UB), figure 5 (UB2), figure 6  
(die), and figure 7 (die).  
1.3 Maximum ratings. T = +25°C, unless otherwise specified.  
A
V
I
I
I
R
θJL  
R
θJEC  
R
T and T  
J STG  
RWM  
O
FSM  
FSM  
θJA(PCB)  
(1) (2)  
t = 1 s  
p
L = .375 inch  
(9.53 mm)  
L = 0  
t = 1 µs  
p
V(pk)  
125  
mA dc  
150  
mA (pk)  
500  
A (pk)  
4
°C/W  
°C/W  
°C/W  
°C  
250  
UR  
UB, UB2 100  
US 40  
100  
275  
-65 to +175  
(1) For temperature-current derating curves, see figure 8.  
(2) T = +75°C for both axial and metal electrode leadless face diodes (MELF) (UR, US) on printed circuit  
A
board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air; pads for (UR, US) =  
.061 inch (1.55 mm) x.105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch  
(0.76 mm) x 1 inch (25.4 mm) long, lead length L ≤ .187 inch (≤ 4.75 mm); R  
with a defined PCB  
θJA  
thermal resistance condition included, is measured at I = 150 mA dc.  
O
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,  
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to  
semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of  
this address information using the ASSIST Online database at https://assist.dla.mil.  
AMSC N/A  
FSC 5961  
 
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JAN1N3595UR-1 替代型号

型号 品牌 替代类型 描述 数据表
JANTX1N3595UR-1 MICROSEMI

完全替代

 Rectifier Diode, 1 Element, 0.15A, Silicon, DO-213AA, GLASS, SIMILAR TO DO-213AA, 2 PIN
JANTXV1N3595UR-1 MICROSEMI

类似代替

 METALLURGICALLY BONDED
1N3595UR-1 MICROSEMI

类似代替

 Standard Rectifier (trr more than 500ns)

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JAN1N3595X MICROSEMI

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JAN1N3612EG1 VISHAY

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