是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | MELF |
包装说明: | O-LELF-R2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.84 |
Is Samacsys: | N | 其他特性: | METALLURGICALLY BONDED |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | O-LELF-R2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最大输出电流: | 0.25 A | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
参考标准: | MIL-19500/279 | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | WRAP AROUND |
端子位置: | END | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN1N3645 | MICROSEMI |
获取价格 |
HIGH VOLTAGE RECTIFIERS | |
JAN1N3645SM | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.25A, Silicon, HERMETIC SEALED, GLASS, MELF-2 | |
JAN1N3646 | MICROSEMI |
获取价格 |
HIGH VOLTAGE RECTIFIERS | |
JAN1N3646SM | MICROSEMI |
获取价格 |
暂无描述 | |
JAN1N3647 | MICROSEMI |
获取价格 |
HIGH VOLTAGE RECTIFIERS | |
JAN1N3647SM | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.25A, Silicon, HERMETIC SEALED, GLASS, MELF-2 | |
JAN1N3649 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 3.3A, 800V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 | |
JAN1N3650 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 3.3A, 1000V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 | |
JAN1N3650R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 3.3A, 1000V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 | |
JAN1N3657 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2 |