Datasheet > JAN1N3649

JAN1N3649

更新时间： 2024-09-22 08:04:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
3页	59K
描述
Rectifier Diode, 1 Phase, 1 Element, 3.3A, 800V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JAN1N3649 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

HIGH RELIABILITY POWER RECTIFIER

Qualified per MIL-PRF-19500/260

• Glass Passivated Die

• Glass to Metal Seal Construction

• 25 Amps Surge Rating • VRRM to 1000 Volts

DEVICES

LEVELS

1N1124A

1N1126A

1N1128A

1N1124RA

1N1126RA

1N1128RA

1N3649

1N3650

1N3649R

1N3650R

JAN

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

1N1124A

1N1124RA

1N1126RA

1N1128RA

1N3649R

200

400

600

Peak Repetitive Reverse Voltage

1N1126A

1N1128A

1N3649

V_RWM

800

1N3650

1N3650R

1000

Average Forward Current, T_C= 150°

I_F

3.3

Peak Surge Forward Current @ t_p= 8.3ms, half sinewave,

T_C= 150°C, T = 1/120s

I_FSM

Thermal Resistance, Junction to Case

Operating Case Temperature Range

Storage Temperature Range

2.0

°C/W

°C

R_θjc

T_C

-65°C to 150°C

-65°C to 200°C

DO-203AA(DO-4)

T_stg

°C

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Forward Voltage

I_F= 10A, T_j= 25°C*

V_F

2.2

Reverse Current

V_R= 200, T_j= 25°C

V_R= 400, T_j= 25°C

V_R= 600, T_j= 25°C

V_R= 800, T_j= 25°C

V_R= 1000, T_j= 25°C

1N1124A

1N1126A

1N1128A

1N3649

1N1124RA

1N1126RA

1N1128RA

1N3649R

I_R

μA

1N3650

1N3650R

Reverse Current

V_R= 200, T_j= 150°C

V_R= 400, T_j= 150°C

V_R= 600, T_j= 150°C

V_R= 800, T_j= 150°C

V_R= 1000, T_j= 150°C

1N1124A

1N1126A

1N1128A

1N3649

1N1124RA

1N1126RA

1N1128RA

1N3649R

I_R

200

1N3650

1N3650R

* Pulse test: Pulse width 300 µsec, Duty cycle 2%

Note:

T4-LDS-0135 Rev. 1 (091678)

Page 1 of 3

12 3

中文翻译

下载PDF

与JAN1N3649相关器件

型号	品牌	获取价格	描述	数据表
JAN1N3650	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3.3A, 1000V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1
JAN1N3650R	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3.3A, 1000V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1
JAN1N3657	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2
JAN1N3657US	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, MELF-2
JAN1N3666-1	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 80V V(RRM), Germanium,
JAN1N3666-1X	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 80V V(RRM), Germanium,
JAN1N3666-2R	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 80V V(RRM), Germanium,
JAN1N3666-2X	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 80V V(RRM), Germanium,
JAN1N3671A	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, 800V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
JAN1N3671A	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 12A, 800V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN