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JAN1N3657US

更新时间： 2024-11-10 20:07:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
3页 289K
描述
Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, MELF-2

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JAN1N3657US 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：MELF包装说明：O-LELF-R2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.84其他特性：METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：O-LELF-R2JESD-609代码：e0
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：1 A
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified参考标准：MIL-19500/286
表面贴装：YES端子面层：TIN LEAD
端子形式：WRAP AROUND端子位置：END
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

JAN1N3657US 数据手册

 浏览型号JAN1N3657US的Datasheet PDF文件第2页浏览型号JAN1N3657US的Datasheet PDF文件第3页 
1N3611 thru 1N3614, 1N3957  
VOIDLESS-HERMETICALLY-SEALED  
STANDARD RECOVERY GLASS  
RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-  
19500/228 and is ideal for high-reliability applications where a failure cannot be  
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak  
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass  
construction using an internal “Category I” metallurgical bond. These devices are  
similar in ratings to the 1N5614 thru 1N5622 series where surface mount MELF  
package configurations are available by adding a “US” suffix (see separate data  
sheet for 1N5614US thru 1N5622US). Microsemi also offers numerous other  
rectifier products to meet higher and lower current ratings with various recovery time  
speed requirements including fast and ultrafast device types in both through-hole  
and surface mount packages.  
“A” Package  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Popular JEDEC registered 1N3611 thru 1N3614 and  
•
Standard recovery 1 Amp rectifiers 200 to 1000 V  
1N3597 series  
•
•
Military and other high-reliability applications  
General rectifier applications including bridges, half-  
bridges, catch diodes, etc.  
•
•
•
•
•
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 200 to 1000 Volts.  
•
•
•
High forward surge current capability  
Extremely robust construction  
Low thermal resistance  
JAN, JANTX, and JANTXV available per MIL-PRF-  
•
Controlled avalanche with peak reverse power  
19500/286 (for JANS, see 1N5614-5622 series)  
capability  
•
Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix (also  
see 1N5614US thru 1N5622US)  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
Junction & Storage Temperature: -65oC to +175oC  
•
•
CASE: Hermetically sealed voidless hard glass  
Thermal Resistance: 38oC/W junction to lead at 3/8  
inch (10 mm) lead length from body  
Average Rectified Forward Current (IO): 1.0 Amps @  
TA = 100ºC and 0.30 Amps at 150ºC  
Forward Surge Current: 30 Amps @ 8.3 ms half-sine  
Solder Temperatures: 260ºC for 10 s (maximum)  
with Tungsten slugs  
TERMINATIONS: Axial leads are copper with  
Tin/Lead (Sn/Pb) finish  
MARKING: Body paint and part number, etc.  
POLARITY: Cathode band  
TAPE & REEL option: Standard per EIA-296  
WEIGHT: 340 mg  
See package dimensions on last page  
•
•
•
•
•
•
•
•
ELECTRICAL CHARACTERISTICS  
WORKING  
MINIMUM  
BREAKDOWN  
VOLTAGE  
AVERAGE  
RECTIFIED  
CURRENT  
(NOTE 2)  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM  
SURGE  
PEAK  
MAXIMUM REVERSE  
CURRENT  
REVERSE  
VOLTAGE  
CURRENT  
(NOTE1)  
TYPE  
V
@ 1 A  
F
V
V
@ 100µA  
I
I
@ V  
I
(PULSED)  
VOLTS  
RWM  
BR  
O
R
RWM  
FSM  
VOLTS  
VOLTS  
AMPS  
AMPS  
µA  
o
150oC  
25oC  
1.0  
1.0  
1.0  
1.0  
1.0  
150oC  
300  
300  
300  
300  
300  
JAN1N3611  
JAN1N3612  
JAN1N3613  
JAN1N3614  
JAN1N3957  
200  
400  
240  
480  
1100.0C  
1.0  
0.30  
0.30  
0.30  
0.30  
0.30  
1.1  
1.1  
1.1  
1.1  
1.1  
30  
30  
30  
30  
30  
600  
720  
1.0  
800  
920  
1.0  
1000  
1150  
1.0  
NOTE 1: TA = 25oC, IO = 1.0 A, 10 surges of 8.3 ms @ 1 minute intervals  
NOTE 2: Linearly derate at 13.3 mA/ºC between TA=100ºC and 175ºC  
Copyright 2004  
12-08 2004 REV A  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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