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JAN1N3612EG1

更新时间： 2024-11-08 21:01:43
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 66K
描述
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, EG1, 2 PIN

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JAN1N3612EG1 技术参数

是否Rohs认证： 不符合生命周期：Transferred
零件包装代码：DO-204包装说明：O-PALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.48其他特性：METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.1 VJEDEC-95代码：DO-204AL
JESD-30 代码：O-PALF-W2JESD-609代码：e0
最大非重复峰值正向电流：30 A元件数量：1
端子数量：2最高工作温度：175 °C
最大输出电流：1 A封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
认证状态：Not Qualified参考标准：MIL-PRF-19500/228
最大重复峰值反向电压：400 V最大反向恢复时间：2 µs
子类别：Rectifier Diodes表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：WIRE
端子位置：AXIALBase Number Matches：1

JAN1N3612EG1 数据手册

 浏览型号JAN1N3612EG1的Datasheet PDF文件第2页 
JAN and JANTX 1N3611EG1 thru 1N3614EG1 and 1N3957EG1  
Patented*  
Vishay Semiconductors  
formerly  
Glass Passivated Rectifiers  
Reverse Voltage 200 to 1000V  
Forward Current 1.0A  
DO-204AL (EG1)  
1.0 (25.4)  
MIN.  
Features  
• Qualified to MIL-PRF-19500/228  
• Class 1 high temperature metallurgically bonded  
construction brazed > 600°C  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
• 1.0 ampere operation at TA = 55°C with no thermal runaway  
• Typical IR less than 0.1µA  
• Cavity-free, glass passivated junction. In epoxy over  
hermetic glass  
Dimensions  
in inches and  
(millimeters)  
0.205 (5.2)  
0.160 (4.1)  
• High temperature soldering guaranteed: 350°C/10 seconds,  
0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension  
®
Mechanical Data  
1.0 (25.4)  
MIN.  
Case: DO-204AL, molded epoxy over glass body (EG1)  
Terminals: Solder plated axial leads, solderable per  
MIL-STD-750, Method 2026  
0.034 (0.86)  
0.028 (0.71)  
DIA.  
Polarity: Color band denotes cathode end  
Mounting Position: Any Weight: 0.015oz., 0.4g  
Flammability: Epoxy is rated UL 94V-0.  
* Glass-plastic encapsulation technique is covered by Patent No. 3,996,602  
and brazed-lead assembly by Patent No. 3,930,306  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Prefix J = JAN Quality Level; Prefix JX = JANTX Quality Level  
Parameter  
Symbol  
Unit  
J,JX 1N3611 J,JX 1N3612 J,JX 1N3613 J,JX 1N3614 J,JX 1N3957  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
1000  
Maximum average forward rectified current  
0.375” (9.5mm) lead length at TA = 55°C  
IF(AV)  
1.0  
A
Peak forward surge current 10 surges of 8.3ms each at  
1 min. intervals super-imposed on IO = 750mA DC;  
VR = rated VRRM TA = 100°C (per MIL-STD-750 m 4066)  
IFSM  
30  
A
RθJL  
RθJA  
38  
45  
Typical thermal resistance(1)  
°C/W  
Operating junction and storage temperature range  
Barometric Pressure  
TJ, TSTG  
Hg  
–65 to +175  
°C  
8
54  
87  
mm  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Minimum reverse breakdown voltage at 50µA  
VBR  
220  
440  
660  
880  
1100  
V
V
Maximum instantaneous  
at 1.0A, TA = 25°C  
at 3.0A, TA = 25°C  
at 1.0A, TA = –65°C  
1.1  
1.3  
1.5  
forward voltage Tp = 300µs  
VF  
Maximum DC reverse current  
at rated DC blocking voltage  
TA = 25°C  
1
IR  
trr  
µA  
µs  
pF  
TA = 150°C  
300  
Typical reverse recovery time at  
IF = 0.5A, IR = 1.0A, Irr = 0.25A  
2.0  
8.0  
Typical junction capacitance at 4V, 1MHz  
CJ  
Notes: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted  
Document Number 88652  
6-Mar-02  
www.vishay.com  
1
12

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